采用尖端硅技术的新型振荡器SSO32C3A481-25.000M是6G模块的理想选择

Suntsu发布采用尖端硅技术的新型振荡器

与需要石英或MEMS等时钟源来产生输出频率的传统石英晶体振荡器不同，Suntsu的无时钟硅振荡器的结构可以在恶劣和高振动环境下实现高度可靠的时钟，而无需使用石英或MEMS。
内置频率合成和温度传感器可产生10kHz至350MHz的频率范围，在-40℃至85℃范围内频率稳定性为+/-50ppm，而LDO和滤波器电路可增强电源噪声抑制，实现低抖动性能。由于其灵活的频率配置和输出物流，这些振荡器具有相对较短的生产时间，这对供应链的连续性至关重要。采用尖端硅技术的新型振荡器SSO32C3A481-25.000M是6G模块的理想选择

Suntsu松图SSO32C晶振，是一款小体积晶振尺寸3.2x2.5mm四脚贴片晶振，石英晶振，有源晶振，CMOS输出石英晶体振荡器，全硅，不含石英和MEMS，提供50ppm(频率稳定性)，内置LDO和电源滤波电路，湿度敏感度等级2，具有超小型，轻薄型，低抖动，低功耗，高性能，高精度，低电压等特点。应用程序：智能终端，以太网，消费电子产品，通信设备，无线蓝牙，车载控制器，医疗设备，数码电子，物联网等应用。采用尖端硅技术的新型振荡器SSO32C3A481-25.000M是6G模块的理想选择

产品编码	石英晶体晶振	输出	抖动	电压	频率稳定性	工作温度
SSO32C1A071-10.000M	3.2X2.5 SILICON SMD (4 PAD) OSCILLATOR	CMOS	1.0ps	1.8V±5%	±50ppm	0°C - +70°C
SSO32C1A071-100.000M	3.2X2.5 SILICON SMD (4 PAD) OSCILLATOR	CMOS	1.0ps	1.8V±5%	±50ppm	0°C - +70°C
SSO32C1A071-12.000M	3.2X2.5 SILICON SMD (4 PAD) OSCILLATOR	CMOS	1.0ps	1.8V±5%	±50ppm	0°C - +70°C
SSO32C1A071-125.000M	3.2X2.5 SILICON SMD (4 PAD) OSCILLATOR	CMOS	1.0ps	1.8V±5%	±50ppm	0°C - +70°C
SSO32C1A071-16.000M	3.2X2.5 SILICON SMD (4 PAD) OSCILLATOR	CMOS	1.0ps	1.8V±5%	±50ppm	0°C - +70°C
SSO32C1A071-20.000M	3.2X2.5 SILICON SMD (4 PAD) OSCILLATOR	CMOS	1.0ps	1.8V±5%	±50ppm	0°C - +70°C
SSO32C1A071-24.000M	3.2X2.5 SILICON SMD (4 PAD) OSCILLATOR	CMOS	1.0ps	1.8V±5%	±50ppm	0°C - +70°C
SSO32C1A071-25.000M	3.2X2.5 SILICON SMD (4 PAD) OSCILLATOR	CMOS	1.0ps	1.8V±5%	±50ppm	0°C - +70°C
SSO32C1A071-40.000M	3.2X2.5 SILICON SMD (4 PAD) OSCILLATOR	CMOS	1.0ps	1.8V±5%	±50ppm	0°C - +70°C
SSO32C1A071-48.000M	3.2X2.5 SILICON SMD (4 PAD) OSCILLATOR	CMOS	1.0ps	1.8V±5%	±50ppm	0°C - +70°C
SSO32C1A071-50.000M	3.2X2.5 SILICON SMD (4 PAD) OSCILLATOR	CMOS	1.0ps	1.8V±5%	±50ppm	0°C - +70°C
SSO32C1A161-10.000M	3.2X2.5 SILICON SMD (4 PAD) OSCILLATOR	CMOS	1.0ps	1.8V±5%	±50ppm	-10°C - +60°C
SSO32C1A161-100.000M	3.2X2.5 SILICON SMD (4 PAD) OSCILLATOR	CMOS	1.0ps	1.8V±5%	±50ppm	-10°C - +60°C
SSO32C1A161-12.000M	3.2X2.5 SILICON SMD (4 PAD) OSCILLATOR	CMOS	1.0ps	1.8V±5%	±50ppm	-10°C - +60°C
SSO32C1A161-125.000M	3.2X2.5 SILICON SMD (4 PAD) OSCILLATOR	CMOS	1.0ps	1.8V±5%	±50ppm	-10°C - +60°C
SSO32C1A161-16.000M	3.2X2.5 SILICON SMD (4 PAD) OSCILLATOR	CMOS	1.0ps	1.8V±5%	±50ppm	-10°C - +60°C
SSO32C1A161-20.000M	3.2X2.5 SILICON SMD (4 PAD) OSCILLATOR	CMOS	1.0ps	1.8V±5%	±50ppm	-10°C - +60°C
SSO32C1A161-24.000M	3.2X2.5 SILICON SMD (4 PAD) OSCILLATOR	CMOS	1.0ps	1.8V±5%	±50ppm	-10°C - +60°C
SSO32C1A161-25.000M	3.2X2.5 SILICON SMD (4 PAD) OSCILLATOR	CMOS	1.0ps	1.8V±5%	±50ppm	-10°C - +60°C
SSO32C1A161-40.000M	3.2X2.5 SILICON SMD (4 PAD) OSCILLATOR	CMOS	1.0ps	1.8V±5%	±50ppm	-10°C - +60°C
SSO32C1A161-48.000M	3.2X2.5 SILICON SMD (4 PAD) OSCILLATOR	CMOS	1.0ps	1.8V±5%	±50ppm	-10°C - +60°C
SSO32C1A161-50.000M	3.2X2.5 SILICON SMD (4 PAD) OSCILLATOR	CMOS	1.0ps	1.8V±5%	±50ppm	-10°C - +60°C
SSO32C1A171-10.000M	3.2X2.5 SILICON SMD (4 PAD) OSCILLATOR	CMOS	1.0ps	1.8V±5%	±50ppm	-10°C - +70°C
SSO32C1A171-100.000M	3.2X2.5 SILICON SMD (4 PAD) OSCILLATOR	CMOS	1.0ps	1.8V±5%	±50ppm	-10°C - +70°C
SSO32C1A171-12.000M	3.2X2.5 SILICON SMD (4 PAD) OSCILLATOR	CMOS	1.0ps	1.8V±5%	±50ppm	-10°C - +70°C
SSO32C1A171-125.000M	3.2X2.5 SILICON SMD (4 PAD) OSCILLATOR	CMOS	1.0ps	1.8V±5%	±50ppm	-10°C - +70°C
SSO32C1A171-16.000M	3.2X2.5 SILICON SMD (4 PAD) OSCILLATOR	CMOS	1.0ps	1.8V±5%	±50ppm	-10°C - +70°C
SSO32C1A171-20.000M	3.2X2.5 SILICON SMD (4 PAD) OSCILLATOR	CMOS	1.0ps	1.8V±5%	±50ppm	-10°C - +70°C
SSO32C1A171-24.000M	3.2X2.5 SILICON SMD (4 PAD) OSCILLATOR	贴片晶振	1.0ps	1.8V±5%	±50ppm	-10°C - +70°C
SSO32C1A171-25.000M	3.2X2.5 SILICON SMD (4 PAD) OSCILLATOR	CMOS	1.0ps	1.8V±5%	±50ppm	-10°C - +70°C
SSO32C1A171-40.000M	3.2X2.5 SILICON SMD (4 PAD) OSCILLATOR	CMOS	1.0ps	1.8V±5%	±50ppm	-10°C - +70°C
SSO32C1A171-48.000M	3.2X2.5 SILICON SMD (4 PAD) OSCILLATOR	CMOS	1.0ps	1.8V±5%	±50ppm	-10°C - +70°C
SSO32C1A171-50.000M	3.2X2.5 SILICON SMD (4 PAD) OSCILLATOR	CMOS	1.0ps	1.8V±5%	±50ppm	-10°C - +70°C
SSO32C1A271-10.000M	3.2X2.5 SILICON SMD (4 PAD) OSCILLATOR	CMOS	1.0ps	1.8V±5%	±50ppm	-20°C - +70°C
SSO32C1A271-100.000M	3.2X2.5 SILICON SMD (4 PAD) OSCILLATOR	CMOS	1.0ps	1.8V±5%	±50ppm	-20°C - +70°C
SSO32C1A271-12.000M	3.2X2.5 SILICON SMD (4 PAD) OSCILLATOR	CMOS	1.0ps	1.8V±5%	±50ppm	-20°C - +70°C
SSO32C1A271-125.000M	3.2X2.5 SILICON SMD (4 PAD) OSCILLATOR	CMOS	1.0ps	1.8V±5%	±50ppm	-20°C - +70°C
SSO32C1A271-16.000M	3.2X2.5 SILICON SMD (4 PAD) OSCILLATOR	CMOS	1.0ps	1.8V±5%	±50ppm	-20°C - +70°C
SSO32C1A271-20.000M	3.2X2.5 SILICON SMD (4 PAD) OSCILLATOR	CMOS	1.0ps	1.8V±5%	±50ppm	-20°C - +70°C
SSO32C1A271-24.000M	3.2X2.5 SILICON SMD (4 PAD) OSCILLATOR	CMOS	1.0ps	1.8V±5%	±50ppm	-20°C - +70°C
SSO32C1A271-25.000M	3.2X2.5 SILICON SMD (4 PAD) OSCILLATOR	CMOS	1.0ps	1.8V±5%	±50ppm	-20°C - +70°C
SSO32C1A271-40.000M	3.2X2.5 SILICON SMD (4 PAD) OSCILLATOR	CMOS	1.0ps	1.8V±5%	±50ppm	-20°C - +70°C
SSO32C1A271-48.000M	3.2X2.5 SILICON SMD (4 PAD) OSCILLATOR	CMOS	1.0ps	1.8V±5%	±50ppm	-20°C - +70°C
SSO32C1A271-50.000M	3.2X2.5 SILICON SMD (4 PAD) OSCILLATOR	CMOS	1.0ps	1.8V±5%	±50ppm	-20°C - +70°C
SSO32C1A381-10.000M	3.2X2.5 SILICON SMD (4 PAD) OSCILLATOR	CMOS	1.0ps	1.8V±5%	±50ppm	-30°C - +85°C
SSO32C1A381-100.000M	3.2X2.5 SILICON SMD (4 PAD) OSCILLATOR	CMOS	1.0ps	1.8V±5%	±50ppm	-30°C - +85°C
SSO32C1A381-12.000M	3.2X2.5 SILICON SMD (4 PAD) OSCILLATOR	CMOS	1.0ps	1.8V±5%	±50ppm	-30°C - +85°C
SSO32C1A381-125.000M	3.2X2.5 SILICON SMD (4 PAD) OSCILLATOR	CMOS	1.0ps	1.8V±5%	±50ppm	-30°C - +85°C
SSO32C1A381-16.000M	3.2X2.5 SILICON SMD (4 PAD) OSCILLATOR	CMOS	1.0ps	1.8V±5%	±50ppm	-30°C - +85°C
SSO32C1A381-20.000M	3.2X2.5 SILICON SMD (4 PAD) OSCILLATOR	CMOS	1.0ps	1.8V±5%	±50ppm	-30°C - +85°C
SSO32C1A381-24.000M	3.2X2.5 SILICON SMD (4 PAD) OSCILLATOR	CMOS	1.0ps	1.8V±5%	±50ppm	-30°C - +85°C
SSO32C1A381-25.000M	3.2X2.5 SILICON SMD (4 PAD) OSCILLATOR	CMOS	1.0ps	1.8V±5%	±50ppm	-30°C - +85°C
SSO32C1A381-40.000M	3.2X2.5 SILICON SMD (4 PAD) OSCILLATOR	CMOS	1.0ps	1.8V±5%	±50ppm	-30°C - +85°C
SSO32C1A381-48.000M	3.2X2.5 SILICON SMD (4 PAD) OSCILLATOR	CMOS	1.0ps	1.8V±5%	±50ppm	-30°C - +85°C
SSO32C1A381-50.000M	3.2X2.5 SILICON SMD (4 PAD) OSCILLATOR	CMOS	1.0ps	1.8V±5%	±50ppm	-30°C - +85°C
SSO32C1A481-10.000M	3.2X2.5 SILICON SMD (4 PAD) OSCILLATOR	CMOS	1.0ps	1.8V±5%	±50ppm	-40°C - +85°C
SSO32C1A481-100.000M	3.2X2.5 SILICON SMD (4 PAD) OSCILLATOR	CMOS	1.0ps	1.8V±5%	±50ppm	-40°C - +85°C
SSO32C1A481-12.000M	3.2X2.5 SILICON SMD (4 PAD) OSCILLATOR	CMOS	1.0ps	1.8V±5%	±50ppm	-40°C - +85°C
SSO32C1A481-125.000M	3.2X2.5 SILICON SMD (4 PAD) OSCILLATOR	CMOS	1.0ps	1.8V±5%	±50ppm	-40°C - +85°C
SSO32C1A481-16.000M	3.2X2.5 SILICON SMD (4 PAD) OSCILLATOR	CMOS	1.0ps	1.8V±5%	±50ppm	-40°C - +85°C
SSO32C1A481-20.000M	3.2X2.5 SILICON SMD (4 PAD) OSCILLATOR	CMOS	1.0ps	1.8V±5%	±50ppm	-40°C - +85°C
SSO32C1A481-24.000M	3.2X2.5 SILICON SMD (4 PAD) OSCILLATOR	CMOS	1.0ps	1.8V±5%	±50ppm	-40°C - +85°C

采用尖端硅技术的新型振荡器SSO32C3A481-25.000M是6G模块的理想选择

石英晶体振荡器优点：
1、石英钟走时准、耗电省、经久耐用为其最大优点。不论是老式石英钟或是新式多功能石英钟都是以石英晶体振荡器为核心电路，其频率精度决定了电子钟表的走时精度。
2、随着电视技术的发展，近来彩电多采用500kHz或503kHz的晶体振荡器作为行、场电路的振荡源，经1/3的分频得到15625Hz的行频，其稳定性和可靠性大为提高。而且晶振价格便宜，更换容易。
3、在通信系统产品中，石英晶体振荡器的价值得到了更广泛的体现，同时也得到了更快的发展。许多高性能的石英晶振主要应用于通信网络、无线数据传输、高速数字数据传输等。