X1G0048010039 SG2016CAN 26MHZ CMOS -40+105爱普生编程晶振全硅MEMS振荡器详细介绍
MEMS振荡器市场前景
据行业猜测微机电体系振荡器正以120％的年增加率替代石英振荡器,还有的猜测微机电体系振荡器是将以四倍的年增加率增加.X1G0048010039编程晶振,SG2016CAN 26MHZ CMOS -40+105晶振,爱普生全硅MEMS振荡器
从对微机电体系上涨的行情猜测超越了前期对微机电体系芯片年增加为30％的猜测.
据介绍在消费电子和自动化爱普生晶振电子产品微型化出产及在单CMOS芯片上多振荡器片上体系MEMS的驱动下,现有的250万美元的MEMS振荡器商场在2012年将增加到140万美元.2012年之后,MEMS振荡器将在手机守时芯片方面到达10亿美元的市场价值.
全硅MEMS振荡器的制作方法及其长处：
MEMS振荡器是由两颗芯片；一为全硅MEMS谐振器,一为具温补功用之发动电路暨锁相环CMOS芯片；运用规范半导体芯片MCM封装方法完结.
2.MEMS出产制程,采全自动化规范半导体制作流程；与出产线上人工本质无关.如一切今天在一切电子产品规划内所运用的IC一般；具有优秀的稳定性以及质量；不易在出产进程中呈现人为失误.
3.支撑频率、精度、电压可编程；可满意客户不同规范组合之轰动器需求.
4.支撑一切业界规范封装(7050,5032,3225,2520),一切规范产品交货期仅需2~4周.
5.MEMS振荡器封装无密封问题,规范MCM封装,防震性达石英产品的25倍.出货不良率低于1dppm.
6.MEMS振荡器内部起振锁相环芯片,具有温补功用；频率精度相对于温度的改动为线性联系,规范所标明的频率精度包括轰动频偏、温度频偏、老化频偏等.
7.MEMS产品之质量一致性乃透过规划阶段完结；与石英产品在量产阶段操控质量之制作控管方法不同,体系厂商无须忧虑来料与量产样品认证之不一致性.
特征
晶体振荡器
频率：20个标准频率
（4MHZ至72MHZ）
输出：CMOS
电源电压：1.6 V 至 3.63 V
工作温度：-20 °C 至 +70 °C
-40 °C 至 +105 °C
应用
物联网、可穿戴设备
数据中心、仓储
医疗、工业自动化X1G0048010039编程晶振,SG2016CAN 26MHZ CMOS -40+105晶振,爱普生全硅MEMS振荡器
爱普生的SGxxxxCAN和SG-210STF是具有CMOS输出的简单封装晶体振荡器（SPXO）系列。
频率 MHZ
频率公差/工作温度
.DB
JG
JH
±25 ×10-6
-20 ºC 至 +70 ºC
±50 ×10-6
-40 ºC 至 +85 ºC
±50 ×10-6
-40 ºC 至 +105 ºC
4
-
X1G004801003000
X1G004801004900
8
-
X1G004801004500
X1G004801004600
10
-
X1G004801002900
X1G004801002700
12
X1G004801005000
X1G004801000700
X1G004801005100
12.288
X1G004801005200
X1G004801004400
X1G004801005300
14.7456
-
X1G004801005400
X1G004801005500
16
-
X1G004801001400
X1G004801005600
20
X1G004801005700
X1G004801005800
X1G004801001800
24
X1G004801005900
X1G004801000200
X1G004801004000
24.576
-
X1G004801006000
X1G004801003100
25
X1G004801001200
X1G004801003500
26
-
X1G004801000300
X1G004801003900
27
-
X1G004801006100
X1G004801002100
32
-
X1G004801006200
X1G004801006300
33.33
-
X1G004801006400
X1G004801006500
33.3333
-
X1G004801002600
X1G004801006600
40
-
X1G004801006700
X1G004801003600
48
X1G004801006800
X1G004801002000
X1G004801006900
50
X1G004801007000
X1G004801001300
X1G004801002800
72
X1G004801007100
X1G004801007200
X1G004801007300
这些 SPXO 非常适合物联网、晶振厂家可穿戴设备、医疗、工业自动化等各种应用。这些 SPXO 具有低电流消耗、1.6 V 至 3.63 V 的宽工作电压和 -40 °C 至 85 °C 的宽工作温度范围，此外还可提供高达 105 °C 的工作温度。
这些 SPXO 提供五种不同的封装尺寸，从 2.0 × 1.6 mm 到 7.0 × 5.0 mm，并提供标准引脚输出。
Frequency Part number
[MHz] SG7050CAN (7.0 x 5.0) SG5032CAN (5.0 x 3.2) SG3225CAN (3.2 x 2.5)
±25 ppm ±50 ppm ±50 ppm ±25 ppm ±50 ppm ±50 ppm ±25 ppm ±50 ppm ±50 ppm
-20 to +70 °C -40 to +85 °C -40 to +105 °C -20 to +70 °C -40 to +85 °C -40 to +105 °C -20 to +70 °C -40 to +85 °C -40 to +105 °C
(Grade: TDB) (Grade: TJG) (Grade: TJH/KJH) (Grade: TDB) (Grade: TJG) (Grade: TJH/KJH) (Grade: TDB) (Grade: TJG) (Grade: TJH/KJH)
4 - X1G004481005100 X1G004481025200 - X1G004451003400 X1G004451019600 - X1G005961001115 X1G005961001215 8 - X1G004481001400 X1G004481025300 - X1G004451002100 X1G004451019700 - X1G005961000415 X1G005961001315 10 - X1G004481000500 X1G004481025400 - X1G004451001300 X1G004451017800 - X1G005961000515 X1G00596100141512 X1G004481025500 X1G004481000600 X1G004481025600 X1G004451019800 X1G004451002800 X1G004451019900 X1G005961001515 X1G005961000615 X1G00596100161512.288 X1G004481025700 X1G004481000100 X1G004481025800 X1G004451020000 X1G004451000100 X1G004451020100 X1G005961001715 X1G005961001815 X1G00596100191514.7456 - X1G004481002500 X1G004481025900 - X1G004451001900 X1G004451020200 - X1G005961002015 X1G005961002115 16 - X1G004481000700 X1G004481026000 - X1G004451000200 X1G004451020300 - X1G005961002215 X1G00596100231520 X1G004481012800 X1G004481000800 X1G004481026100 X1G004451020400 X1G004451001100 X1G004451020500 X1G005961002415 X1G005961000715 X1G00596100251524 X1G004481002200 X1G004481000200 X1G004481026200 X1G004451017200 X1G004451000300 X1G004451020600 X1G005961002615 X1G005961000115 X1G00596100271524.576 - X1G004481001600 X1G004481026300 - X1G004451002900 X1G004451020700 - X1G005961000815 X1G00596100281525 X1G004481011600 X1G004481000300 X1G004481026400 X1G004451009700 X1G004451000400 X1G004451020800 X1G005961002915 X1G005961000215 X1G00596100301526 - X1G004481003500 X1G004481026500 - X1G004451008200 X1G004451020900 - X1G005961003115 X1G00596100321527 - X1G004481000400 X1G004481026600 - X1G004451000500 X1G004451021000 - X1G005961003315 X1G00596100341532 - X1G004481000900 X1G004481026700 - X1G004451001400 X1G004451021100 - X1G005961003515 X1G00596100361533.33 - X1G004481017900 X1G004481026800 - X1G004451021200 X1G004451021300 - X1G005961003715 X1G005961003815
33.3333 - X1G004481003300 X1G004481026900 - X1G004451016700 X1G004451021400 - X1G005961003915 X1G005961004015 40 - X1G004481001500 X1G004481027000 - X1G004451001200 X1G004451021500 - X1G005961000915 X1G00596100411548 X1G004481022600 X1G004481001100 X1G004481027100 X1G004451014900 X1G004451000700 X1G004451011200 X1G005961004215 X1G005961000315 X1G00596100431550 X1G004481011200 X1G004481001200 X1G004481016000 X1G004451011500 X1G004451000800 X1G004451003600 X1G005961004415 X1G005961001015 X1G00596100451572 X1G004481027200 X1G004481018300 X1G004481027300 X1G004451021600 X1G004451021700 X1G004451021800 X1G005961004615 X1G005961004715 X1G005961004815
MEMS振荡器与石英振荡器比较
MEMS振荡器以其杰出的特性,被认为是传统的石英振荡器的替代产品.
石英轰动器一般制作的方法及其缺陷：X1G0048010039编程晶振,SG2016CAN 26MHZ CMOS -40+105晶振,爱普生全硅MEMS振荡器
1.石英产品交货周期长.因为出产所需质料需来自于不同供货商；包含芯片厂、基座厂商、石英晶棒厂商,以及厂内的切开设备、出产职工等资源均会影响交货周期.一般来说,在厂内以及、出售途径无库存情况下,交货周期由6~12周.而一般非常用、有源晶振很多出产之产品,其订购周期长达8～16周.交货周期不定：因为出产工序杂乱；任何一道工序发生过错,该批出产均需从头来过；形成交期重置.
2.石英产品密封不易确保；形成频率误差.石英切开后需镀上水银,其全体厚度决议了起振的频率.封装时需将内部以氮气填充,坚持与空气阻隔以防止内部质料氧化,形成频率改动.或因封装不良、或因轰动；均可能对外观密封质量改动,即所谓漏气.一般漏气可能发生在石英厂出厂前的检测；或到体系厂后出产完结测验发现频率偏移、或体系厂商出产测验完结出货后在客户端发生不良.（类举：如轮胎被钉子刺穿后,灰心时刻不等）
3.石英产品的防震性不良.石英本身易碎、怕摔.石英与起振芯片结合时所选用的点胶方法,以及运用的质料均会对轰动器封装的稳定性、一致性具有必定的影响.防震性不良,形成货运进程可能有到货不良、SMT打件损耗等.
4.石英产品的频率精度与温度联系非线性联系（或称温飘；一般为向下抛物线）.一般石英产品规范书上标明的频率稳定度（或精度）；一般为在25℃室温；除此之外,还有所谓”温飘”.因为其非线性的联系,体系厂商在实验室测验内测验的精度,甚或运用凹凸温测验到的石英轰动器规范,并无法确保石英厂商在量产交货阶段所交给厂商的元件均能契合其要求的规范.因为非线性石英对温度的特性,使得石英产品在物料进厂查验时变得无所根据,直到上线测验,才有时机判别来料的质量.有时候因为石英质料的不良,在体系厂商SMD进程中通过回流銲（无铅制程高达260℃）制程时也会对石英形成质变,使得轰动器的频率发生偏移.
5.不同频率轰动器；厂商需对石英贴片晶振做不同方法的切开、不同频率起振的方法也需调配不同的芯片,支撑的电压不同、或许需求的颤动、精度规范不同,轰动器内部调配的起振芯片均不同.
一切石英厂商建厂后,除非增加出产线,不然出产产能固定；供货有限.一切石英厂无法针对一切规范的轰动器预备出产线或具有出产规模；因而一般来说；单个厂商仅针对某些规范产品出产,形成体系厂商客户不行能选用的收购方针.即便体系厂商方针是减缩同类型产品的供货商,但因为石英产品的特别性,以及其出产工艺上的约束,厂商的方针假如停留在仅对现有石英供货商之间收购绝无法到达；而SITIME的全硅可编程轰动器,从规划、出产上的根本性革新,具有供给厂商的条件.因为不行能为客户厂商不同需求轰动器备料齐全,石英厂商间普遍存在同业调货情况,即不同石英出产厂商透过同一品牌交货给体系厂商,调货交货也意味着质量控管的空窗.因而一些体系厂商严正规则协作石英厂商不得有调货供货情况；以防止此无法操控之质量危险.
6.一般来说,石英厂商所做的作业为石英切开、与日系厂商购买基座、起振芯片；将石英以及芯片以特别黏胶结合后至于基座上,并进行填充氮气密封.数十道繁复工序；且需求很多人工参加量产制作、质量管理.绝大部分石英厂商常见或偶见厂内出产控管不良形成之产品污染、密封不良形成漏气（使频率违背规范）等不良现像.
X1G0048010039编程晶振,SG2016CAN 26MHZ CMOS -40+105晶振,爱普生全硅MEMS振荡器
MEMS振荡器是指通过微机电体系（MEMS）制作出的一种可编程的硅振荡器,MEMS振荡器的温度稳定性也比传统晶振更好,不受环境温度凹凸改动的影响.MEMS振荡器归于咱们一般所说的有源晶振.它是对传统石英晶振32.768K有源晶振产品的一个升级更新换代,防震效果是前者的25倍,具有不受振荡影响、不易碎的特色.MEMS振荡器特色
与传统石英比较,全硅MEMS振荡器不论从出产工艺仍是组件规划结构上,都更契合现代电子产品的规范,也是对传统石英产品的升级换代.*高性能模仿温补技能使全硅MEMS振荡器具有优异的全温频率稳定性,完全免除温飘问题；可编程的途径为体系规划和缩短新产品开发周期供给必要的灵活性；完善的半导体出产链可让全硅MEMS供货期全面缩短,并提高需求应急的才能；全自动出产的IC结构在质量和可靠性方面有无可置疑的优秀的一致性.
MEMS振荡器的可靠性
频率稳定性特别是在不同温度下的稳定性,是电子工程师在挑选振荡器时考虑的主要参数之一.因为每一个规划都需求确保体系在整个作业温度范围内正常运作.而温飘(频率随温度而明显改动的现象)则是传统石英产品的缺陷,难以单纯从制作上战胜.
MEMS振荡器
深黑色曲线显现出一个工业级-40℃-85℃石英振荡器要到达全温频率稳定性25PPM在技能上的难度.可以看到在凹凸温的情况下,石英作为参阅时钟其规划余量较不充分,由此也增加了全体体系在工业级全温发生不稳定运转的可能性.
同时也显现了各种颜色的平衡线,代表了110个discera全硅MEMS振荡器在-40℃-85℃范围内的实际总频差.与石英振荡器比较,这些工业级MEMS振荡器频率稳定性不但可坚持在15PPM以下,其曲线更具有线性特征,为体系供给更大的规划余量.
正因为全硅MEMS振荡器运用温度补偿的技能,从振荡器规划上处理了石英温飘的烦恼,因而电子工程师在选料时有了更大的地步.他们能够挑选50PPM的MEMS振荡器来替代许多25PPM的石英,既可满意体系所需规范,又可降低成本.或许,他们可选用25PPM的MEMS振荡器来提高体系全体稳定性.
MEMS振荡器结构与作业原理
传统的石英振荡器是由压电石英加上简略的起振芯片和有源晶振SPXO金属封装组成的,其出产工艺包含：石英切开镀银、购买基座、起振芯片,以及将石英及芯片以特别黏胶结合后至于基座上,然后充填氮气,用金属封装进行密封.而不同频率、不同作业电压振荡器的发生,则是由石英的不同形状、镀银厚度及所佩的起振芯片所决议.所以从出产工艺角度,石英工业是一个人工密集型的半自动化传统工业,其产品也遭到传统原材料和工艺的约束：1.杂乱的出产程序导致供货期的拖长及缺货应急困难的现象；2.不同振荡器规范需不同质料不同工艺,从而使制品缺少灵活性,无法为满意不同运用而进行实时装备；3.压电石英对温度敏感度高的特性,形成石英振荡器的温飘烦恼；4.石英易碎怕摔老化的缺陷需靠出产工艺和质量管理来处理,缺少质量和长时刻可靠性的一致性.为处理石英的内涵缺陷,因而在时钟组件的选料上开端转向选用了全硅的产品结构,有一个全硅MEMS谐振器和一个可编程Analog CMOS驱动芯片堆栈,并以规范QFNIC封装方法完结.
X1G0048010039编程晶振,SG2016CAN 26MHZ CMOS -40+105晶振,爱普生全硅MEMS振荡器
深圳市壹兆电子科技有限公司
编码
型号
频率
LxWxH/尺寸
输出方式
电源电压
工作温度
频率偏差
X1G0048010027
SG2016CAN
10.000000 MHz
2.00 x 1.60 x 0.70 mm
CMOS
1.600 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0048010028
SG2016CAN
50.000000 MHz
2.00 x 1.60 x 0.70 mm
CMOS
1.600 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0048010031
SG2016CAN
24.576000 MHz
2.00 x 1.60 x 0.70 mm
CMOS
1.600 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0048010035
SG2016CAN
25.000000 MHz
2.00 x 1.60 x 0.70 mm
CMOS
1.600 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0048010036
SG2016CAN
40.000000 MHz
2.00 x 1.60 x 0.70 mm
CMOS
1.600 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0048010039
SG2016CAN
26.000000 MHz
2.00 x 1.60 x 0.70 mm
CMOS
1.600 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0048010040
SG2016CAN
24.000000 MHz
2.00 x 1.60 x 0.70 mm
CMOS
1.600 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0048010046
SG2016CAN
8.000000 MHz
2.00 x 1.60 x 0.70 mm
CMOS
1.600 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0048010049
SG2016CAN
4.000000 MHz
2.00 x 1.60 x 0.70 mm
CMOS
1.600 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0048010051
SG2016CAN
12.000000 MHz
2.00 x 1.60 x 0.70 mm
CMOS
1.600 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0048010053
SG2016CAN
12.288000 MHz
2.00 x 1.60 x 0.70 mm
CMOS
1.600 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0048010055
SG2016CAN
14.745600 MHz
2.00 x 1.60 x 0.70 mm
CMOS
1.600 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0048010056
SG2016CAN
16.000000 MHz
2.00 x 1.60 x 0.70 mm
CMOS
1.600 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0048010063
SG2016CAN
32.000000 MHz
2.00 x 1.60 x 0.70 mm
CMOS
1.600 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0048010065
SG2016CAN
33.330000 MHz
2.00 x 1.60 x 0.70 mm
CMOS
1.600 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0048010066
SG2016CAN
33.333300 MHz
2.00 x 1.60 x 0.70 mm
CMOS
1.600 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0048010069
SG2016CAN
48.000000 MHz
2.00 x 1.60 x 0.70 mm
CMOS
1.600 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0048010073
SG2016CAN
72.000000 MHz
2.00 x 1.60 x 0.70 mm
CMOS
2.250 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010102
SG-8018CG
22.579200 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010103
SG-8018CG
64.478100 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010104
SG-8018CG
59.737100 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010105
SG-8018CG
64.342677 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010106
SG-8018CG
43.540157 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010107
SG-8018CG
25.600000 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010108
SG-8018CG
19.660800 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010110
SG-8018CG
85.000000 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010111
SG-8018CG
63.055823 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010112
SG-8018CG
42.669354 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010122
SG-8018CG
74.250000 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010123
SG-8018CG
13.000000 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010124
SG-8018CG
20.000000 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010129
SG-8018CG
12.568000 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010130
SG-8018CG
6.940000 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010131
SG-8018CG
3.072000 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010132
SG-8018CG
6.780000 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010133
SG-8018CG
13.560000 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010134
SG-8018CG
27.120000 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010135
SG-8018CG
4.096000 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010136
SG-8018CG
54.000000 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010139
SG-8018CG
7.372800 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010140
SG-8018CG
1.843200 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010141
SG-8018CG
11.289600 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010142
SG-8018CG
11.289600 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010143
SG-8018CG
14.318180 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010144
SG-8018CG
3.686400 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010145
SG-8018CG
3.686400 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010146
SG-8018CG
49.152000 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010147
SG-8018CG
4.194304 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010148
SG-8018CG
16.483200 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010149
SG-8018CG
51.840000 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010150
SG-8018CG
77.760000 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010151
SG-8018CG
12.800000 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010152
SG-8018CG
1.024000 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010153
SG-8018CG
0.819200 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010154
SG-8018CG
37.125000 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010155
SG-8018CG
148.500000 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010156
SG-8018CG
74.250000 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010157
SG-8018CG
13.225600 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010158
SG-8018CG
104.857600 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010159
SG-8018CG
9.900000 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010160
SG-8018CG
18.430000 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010165
SG-8018CG
35.000000 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010166
SG-8018CG
15.000000 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010167
SG-8018CG
9.830400 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010168
SG-8018CG
9.000000 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010169
SG-8018CG
2.097000 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010170
SG-8018CG
6.000000 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010171
SG-8018CG
11.059200 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010172
SG-8018CG
9.900000 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010173
SG-8018CG
12.000000 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010174
SG-8018CG
33.500000 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010175
SG-8018CG
3.570000 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010176
SG-8018CG
8.037500 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010177
SG-8018CG
80.000000 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010178
SG-8018CG
35.890700 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010180
SG-8018CG
72.000000 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010181
SG-8018CG
72.000000 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010182
SG-8018CG
75.000000 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010183
SG-8018CG
75.000000 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010184
SG-8018CG
49.152000 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010185
SG-8018CG
98.304000 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010186
SG-8018CG
98.304000 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010187
SG-8018CG
37.125000 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010188
SG-8018CG
33.330000 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010189
SG-8018CG
33.330000 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010190
SG-8018CG
18.432000 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010191
SG-8018CG
18.432000 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010192
SG-8018CG
7.000000 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010193
SG-8018CG
8.727000 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010194
SG-8018CG
21.606000 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010195
SG-8018CG
39.321600 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010196
SG-8018CG
41.140000 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010197
SG-8018CG
49.500000 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010198
SG-8018CG
6.553600 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010199
SG-8018CG
64.000000 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010200
SG-8018CG
8.050000 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010201
SG-8018CG
1.000000 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010204
SG-8018CG
8.000000 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010205
SG-8018CG
4.000000 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010206
SG-8018CG
40.000000 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010207
SG-8018CG
41.010000 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010208
SG-8018CG
0.910000 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010209
SG-8018CG
69.200000 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010210
SG-8018CG
32.768000 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010211
SG-8018CG
58.982000 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010212
SG-8018CG
155.520000 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010213
SG-8018CG
65.000000 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010214
SG-8018CG
130.000000 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010215
SG-8018CG
16.384000 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010216
SG-8018CG
5.000000 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010217
SG-8018CG
4.410000 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010222
SG-8018CG
22.956600 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010223
SG-8018CG
78.000000 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010224
SG-8018CG
16.777216 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010225
SG-8018CG
12.500000 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010226
SG-8018CG
12.500000 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010227
SG-8018CG
11.059200 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010232
SG-8018CG
36.000000 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010233
SG-8018CG
18.000000 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010234
SG-8018CG
12.000000 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010235
SG-8018CG
24.000000 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010236
SG-8018CG
5.529600 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010237
SG-8018CG
16.934000 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010238
SG-8018CG
3.580000 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010239
SG-8018CG
2.000000 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010240
SG-8018CG
16.934000 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010241
SG-8018CG
38.400000 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010242
SG-8018CG
23.040000 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010243
SG-8018CG
46.080000 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010244
SG-8018CG
92.160000 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0056010245
SG-8018CG
1.843200 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
有源晶振联系人：龚成
石英晶体振荡器电话：0755--27876236
QQ：769468702
进口晶振手机：13590198504
陶瓷晶振邮箱:zhaoxiandz@163.com
日本台湾欧美晶振品牌网站:http://www.oscillatorcrystal.com
SG2016CAN爱普生晶振编码X1G004801000200低相位抖动SPXO
511ACA156M250CAG 3225 156.2500M LVPECL 3.3V 20PP 6P Skyworks
Greenray格林雷晶振,T1215差分晶振,T1215-T57-PE-5.0-LG-B-300MHz-E晶振
美国格林雷晶振,T124移动通讯晶振,T124-T16-3.3-32.768kHz-E晶振
Greenray格林雷晶振,T121有源晶振,T121-T57-100.0MHz温补晶振
