日本KDS晶振,Y1XVD008192VB有源晶振编码,石英晶振型号DSV321SV 3225 8.19M

1XVD008192VB晶振型号DSV321SV 3225 8.19M晶体管器件物理领域取得进展

该研究得到国家重点研发计划项目电子器件与集成技术重点实验室开放课题、国家自然科学基金及中科院战略性先导科技项目的KDS晶振大真空晶体支持.针对此问题团队制备了基于p型和n型有机分子构成的单晶电荷转移界面的晶体管器件,探究了电荷转移界面以及栅氧界面电场的相互作用对晶体管工作时载流子及电导分布特性的影响.相较于界面单晶体内的缺陷态减少3个数量级以上,这意味着更小的散射概率和更高的器件迁移率.

日本KDS晶振,Y1XVD008192VB有源晶振编码,石英晶振型号DSV321SV 3225 8.19M

通过开尔文探针显微镜对表面电势的栅压依赖性表征和二维数值仿真,证实电荷转移界面的内建电场与栅氧界面电场发生有效耦合,提高了载流子体传输比例,减少了界面无序因素对载流子传输的限制作用,大幅度提升了器件的跨导.有源晶振相比于传统基于无序半导体材料的场效应晶体管中掺杂引起的缺陷钝化现象,由有序单晶电荷转移界面制备的场效应晶体管不仅整体电导、迁移率高,还具有跨导不依赖于栅压的电学特性,

日本KDS晶振,Y1XVD008192VB有源晶振编码,石英晶振型号DSV321SV 3225 8.19M

品牌	原厂代码	型号	尺寸	频率	负载/电压
KDS	1ZC12256	DST1210A	1210	32.768K	9PF
KDS	1TJL070DR1A0009	DST1610AL	1610	32.768K	7PF
KDS	1TJH125DR1A0004	DST1610A	1610	32.768K	12.5PF
KDS	1TJF080DP1AA003	DST310S	3215	32.768K
KDS	1TJF080DP1AA003	DST310S	3215	32.768k	8PF
KDS	1TJF0SPDJ1AI00S	DST310S	3215	32.768k
KDS	1TJF080DP1AI00P	DST310S	3215	32.768k	8PF
KDS	1TJF090DP1AI007	DST310S	3215	32.768k	9PF
KDS	1TJF0SPDP1AI008	DST310S	3215	32.768k
KDS	1TJF125DP1AI009	DST310S	3215	32.768k	12.5PF
KDS	1TJF090DP1AA00L	DST310S	3215	32.768k	9PF
KDS	1TJF080DP1AA00K	DST310S	3215	32.768k	8PF
KDS	1TJF0SPDP1AA00G	DST310S	3215	32.768k
KDS	1TJF0SPDN1A000B	DST310S	3215	32.768k
KDS	1TD125DGNS003	DT-26	206	32.768k	12.5PF
KDS	1TD125DHNS036	DT-26	206	32.768k	12.5PF
KDS	1TD125DHNS002	DT-26	206	32.768k	12.5PF
KDS	1TD060DHNS014	DT-26	206	32.768k	6.0PF
KDS	1TD125BHNS001	DT-26	206	32.768k	12.5PF
KDS	1TD075BHNS001	DT-26	206	32.768k	7.5PF
KDS	1TD075BHNS001	DT-26	206	32.768k	7.5PF
KDS	1TD125BFNS001	DT-26	206	32.768k	12.5PF
KDS	1TD1001HNS001	DT-26	206	32.768k	10.0PF
KDS	1TD1250HNS005	DT-26	206	32.768k	12.5PF
KDS	1TC125DFNS030	DT-38	308	32.768k	12.5PF
KDS	1TC125NFNS002	DT-38	308	32.768k	12.5PF
KDS	1TC125AFSS003	DT-38	308	32.768k	12.5PF
KDS	1TC250E65	DT-38	308	32.768k	12.5PF
KDS	1TC125JHNS001	DT-38	308	32.768KHZ	12.5PF
KDS	1TC125JHNS001	DT-38	308	32.768KHZ	12.5PF
KDS	1TC070DFNS012	DT-38	308	32.768KHZ	7PF
KDS	1TD060DHNS006	DT-26	206	32.768KHZ	6PF
KDS	KDS圆柱石英晶振	DT-38	308	32.768KHZ	12.5PF
KDS	1TJS060DJ4A739Q	DMX-26S	8038	32.768K	6PF
KDS	1ZZHAM24000BB0B	DSX1612S	1612	24.000M
KDS	1ZZHAM26000AB0A	DSX1612S	1612	26.000M
KDS	1ZZCAA24000BE0B	DSX211G	2016	24.000M	10PF
KDS	1ZZCAA27120BB0D	DSX211G	2016	27.12M	10PF
KDS	1ZZCAA27120CD0A	DSX211G	2016	27.12M
KDS	1ZZNAE26000AB0J	DSX211SH	2016	26.000M	7PF
KDS	1ZZNAE26000AB0J	DSX211SH	2016	26.000M	7PF
KDS	1ZCP37400AA0H	DSX211AL	2016	37.400M
KDS	1ZZNAE38400AA0C	DSX211SH	2016	38.400M
KDS	1ZZNAE48000ZZ0R	DSX211SH	2016	48.000M	7PF
KDS	7AE01200A00A000000I	DSX221G	2520	12.000M	8PF
KDS	1ZNA16000AB0P	DSX221G	2520	16.000M	9PF
KDS	1ZCB26000AB0R	DSX221G	2520	26.000M
KDS	1ZNA32000BB0B	DSX221G	2520	32.000M	12PF
KDS	1ZC13727	DSX221SH	2520	24.000M	10PF
KDS	1ZN326000AB0A	DSX221SH	2520	26.000M	7PF
KDS	1ZN326000AB0A	DSX221SH	2520	26.000M	7PF
KDS	1C208000BC0R	DSX321G	3225	8.000M	12PF
KDS	1C208000CE0H	DSX321G	3225	8.000M	10PF
KDS	1C208000EE0BL	DSX321G	3225	8.000M	12PF
KDS	17AD00800A1C	DSX321G	3225	8.000M	12PF
KDS	1ZCM080000EE0A	DSX320G	3225	8.000M	8PF
KDS	1C210000EK0C	DSX321G	3225	10.000M
KDS	17AD01200A1R	DSX321G	3225	12.000M
KDS	1C214745CE0E	DSX321G	3225	14.7456M

这表明迁移率的提高不仅取决于效应,还存在其他影响电学性能的机制.相比于传统基于无序半导体材料的场效应晶体管中掺杂引起的缺陷钝化现象,由有序单晶荷转移界面制备的场效应晶体管不仅整体电导、深圳进口晶振代理商迁移率高,还具有跨导不依赖于栅压的电学特性,这表明迁移率的提高不仅取决于效应,还存在其他影响电学性能的机制.近日所微电子器件与集成技术重点实验室在有机分子晶体器件的载流子输运研究方向取得重要进展.

日本KDS晶振,Y1XVD008192VB有源晶振编码,石英晶振型号DSV321SV 3225 8.19M