规格:
频率范围:10MHz至54MHz有源晶振
电源电压:典型值3.3V。
工作温度:-40℃至+85℃(+105℃选项)
频率/温度特性:±0.28x10-6。温度过高
频率斜率:±0.2x10-6/ C最大。温度过高
频率老化:±3.0x10-6。/ 20年(符合Stratum3)
小体积尺寸封装:5.0x3.2x1.45mm(10脚贴片晶振)
应用程序:网络设备,基站,微波炉,同步合规标准,Stratum3,同步,IEEE1588
TG-5510CB温补晶振X1G006061009514用于5G室外基站控制器
石英晶振 | 型号 | 频率 | 尺寸 | 输出波 | 电源电压 | 精度 | 工作温度 |
X1G006061004514 | TG-5510CB | 25.000000MHz | 5.00x3.20x1.50mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm | -40 to +105 °C |
X1G006061004814 | TG-5510CB | 50.000000MHz | 5.00x3.20x1.50mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm | -40 to +105 °C |
X1G006061007614 | TG-5510CB | 30.720000MHz | 5.00x3.20x1.50mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm | -40 to +85 °C |
X1G006061008214 | TG-5510CB | 38.400000MHz | 5.00x3.20x1.50mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm | -40 to +85 °C |
X1G006061009014 | TG-5510CB | 25.000000MHz | 5.00x3.20x1.50mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm | -40 to +85 °C |
X1G006061009214 | TG-5510CB | 25.600000MHz | 5.00x3.20x1.50mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm | -40 to +85 °C |
X1G006061009414 | TG-5510CB | 12.800000MHz | 5.00x3.20x1.50mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm | -40 to +85 °C |
X1G006061009514 | TG-5510CB | 20.000000MHz | 5.00x3.20x1.50mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm | -40 to +85 °C |
X1G006061009714 | TG-5510CB | 50.000000MHz | 5.00x3.20x1.50mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm | -40 to +85 °C |
X1G006061009814 | TG-5510CB | 10.000000MHz | 5.00x3.20x1.50mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm | -40 to +85 °C |
TG-5510CB温补晶振X1G006061009514用于5G室外基站控制器
温补晶振即温度补偿晶体振荡器(TCXO),本身具有温度补偿作用,是通过附加的温度补偿电路使由周围温度变化产生的振荡频率变化量削减的一种石英晶体振荡器,高低温度稳定性:频率精度0.5PPM~2.0PPM,常用频率:26M,33.6M,38.4M,40M.因产品性能稳定,精度高等优势,被广泛应用到一些比较高端的数码通讯产品领域,GPS全球定位系统,智能手机,WiMAX和无线通信等产品,符合RoHS/无铅.