智能汽车自动驾驶还没有完全安全SG-210SDBA爱普生车规温度晶振编码X1G004601A00500
智能汽车自动驾驶还没有完全安全SG-210SDBA爱普生车规温度晶振编码X1G004601A00500
智能汽车自动驾驶还有一些系统能够执行变道和其他高级操作.但是这些系统的辅助还没有完全能够取代人类驾驶员,也不提倡驾驶员在行驶车辆过程中转移注意力做其他活动.这三个系统也采用不同方式来唤醒驾驶员的注意力,爱普生晶振以及不同的升级顺序和故障安全措施.其中有53%的SuperCruise用户、42%的Autopilot用户和12%的ProPILOTAssist用户表示,他们愿意将自己的车辆视为完全自动驾驶.使用特斯拉Autopilot或通用汽车SuperCruise等高级辅助驾驶系统的美国司机往往不顾警告,将自己的车辆视为能实现完全自动驾驶.美国IIHS调查的高级辅助驾驶系统以凯迪拉克SuperCruise、日产/英菲尼迪ProPILOTAssist和特斯拉Autopilot这三种,一方面是因为这些系统反映了市场上设计的多样性.
SG-210SDBA爱普生车规温度晶振编码X1G004601A00500,智能自动驾驶汽车晶振
爱普生有源晶振编码 | 型号 | 频率 | 长X宽X高 | 输出波 | 电源电压 | 工作温度 | 频差 |
X1G004611A00100 | SG-210SEBA | 24.000000 MHz | 2.50 x 2.00 x 0.90 mm | CMOS | 1.600 to 2.200 V | -40 to 105 °C | +/-50 ppm |
X1G004611A00300 | SG-210SEBA | 27.000000 MHz | 2.50 x 2.00 x 0.90 mm | CMOS | 1.600 to 2.200 V | -40 to 125 °C | +/-100 ppm |
X1G004611A00400 | SG-210SEBA | 20.000000 MHz | 2.50 x 2.00 x 0.90 mm | CMOS | 1.600 to 2.200 V | -40 to 125 °C | +/-100 ppm |
X1G004611A00500 | SG-210SEBA | 27.000000 MHz | 2.50 x 2.00 x 0.90 mm | CMOS | 1.600 to 2.200 V | -40 to 105 °C | +/-50 ppm |
X1G004601A00500 | SG-210SDBA | 16.000000 MHz | 2.50 x 2.00 x 0.90 mm | CMOS | 2.200 to 3.000 V | -40 to 125 °C | +/-100 ppm |
X1G004601A00700 | SG-210SDBA | 27.000000 MHz | 2.50 x 2.00 x 0.90 mm | CMOS | 2.200 to 3.000 V | -40 to 125 °C | +/-100 ppm |
X1G004611A00100 | SG-210SEBA | 27.000000 MHz | 2.50 x 2.00 x 0.90 mm | CMOS | 1.600 to 2.200 V | -40 to +125 °C | +/-100 ppm |
X1G004611A00300 | SG-210SEBA | 20.000000 MHz | 2.50 x 2.00 x 0.90 mm | CMOS | 1.600 to 2.200 V | -40 to +125 °C | +/-100 ppm |
X1G004611A00400 | SG-210SEBA | 25.000000 MHz | 2.50 x 2.00 x 0.90 mm | CMOS | 1.600 to 2.200 V | -40 to +125 °C | +/-100 ppm |
X1G004611A00500 | SG-210SEBA | 24.000000 MHz | 2.50 x 2.00 x 0.90 mm | CMOS | 1.600 to 2.200 V | -40 to +125 °C | +/-100 ppm |
X1G004601A00500 | SG-210SDBA | 16.000000 MHz | 2.50 x 2.00 x 0.90 mm | CMOS | 2.200 to 3.000 V | -40 to +125 °C | +/-100 ppm |
X1G004601A00700 | SG-210SDBA | 27.000000 MHz | 2.50 x 2.00 x 0.90 mm | CMOS | 2.200 to 3.000 V | -40 to +125 °C | +/-100 ppm |
X1G004601A00500 | SG-210SDBA | 16.000000 MHz | 2.50 x 2.00 x 0.90 mm | CMOS | 2.200 to 3.000 V | -40 to 125 °C | +/-100 ppm |
X1G004601A00700 | SG-210SDBA | 27.000000 MHz | 2.50 x 2.00 x 0.90 mm | CMOS | 2.200 to 3.000 V | -40 to 125 °C | +/-100 ppm |
X1G004601A01100 | SG-210SDBA | 27.000000 MHz | 2.50 x 2.00 x 0.90 mm | CMOS | 2.200 to 3.000 V | -40 to 105 °C | +/-50 ppm |
X1G004611A00100 | SG-210SEBA | 24.000000 MHz | 2.50 x 2.00 x 0.90 mm | CMOS | 1.600 to 2.200 V | -40 to 105 °C | +/-50 ppm |
X1G004611A00300 | SG-210SEBA | 27.000000 MHz | 2.50 x 2.00 x 0.90 mm | CMOS | 1.600 to 2.200 V | -40 to 125 °C | +/-100 ppm |
X1G004611A00400 | SG-210SEBA | 20.000000 MHz | 2.50 x 2.00 x 0.90 mm | CMOS | 1.600 to 2.200 V | -40 to 125 °C | +/-100 ppm |
X1G004611A00500 | SG-210SEBA | 27.000000 MHz | 2.50 x 2.00 x 0.90 mm | CMOS | 1.600 to 2.200 V | -40 to 105 °C | +/-50 ppm |
X1G004611A01200 | SG-210SEBA | 24.000000 MHz | 2.50 x 2.00 x 0.90 mm | CMOS | 1.600 to 2.200 V | -40 to 105 °C | +/-100 ppm |
X1G004611A01300 | SG-210SEBA | 33.000000 MHz | 2.50 x 2.00 x 0.90 mm | CMOS | 1.600 to 2.200 V | -40 to 85 °C | +/-50 ppm |
X1G004611A01400 | SG-210SEBA | 16.666600 MHz | 2.50 x 2.00 x 0.90 mm | CMOS | 1.600 to 2.200 V | -40 to 85 °C | +/-50 ppm |
X1G004611A01600 | SG-210SEBA | 14.000000 MHz | 2.50 x 2.00 x 0.90 mm | CMOS | 1.600 to 2.200 V | -40 to 105 °C | +/-50 ppm |
X1G004611A01700 | SG-210SEBA | 37.125000 MHz | 2.50 x 2.00 x 0.90 mm | CMOS | 1.600 to 2.200 V | -40 to 105 °C | +/-50 ppm |
X1G004611A01900 | SG-210SEBA | 13.000000 MHz | 2.50 x 2.00 x 0.90 mm | CMOS | 1.600 to 2.200 V | -40 to 105 °C | +/-50 ppm |
X1G004611A02000 | SG-210SEBA | 10.000000 MHz | 2.50 x 2.00 x 0.90 mm | CMOS | 1.600 to 2.200 V | -40 to 85 °C | +/-50 ppm |
X1G004611A02100 | SG-210SEBA | 48.000000 MHz | 2.50 x 2.00 x 0.90 mm | CMOS | 1.600 to 2.200 V | -40 to 105 °C | +/-50 ppm |
X1G004611A02200 | SG-210SEBA | 16.660000 MHz | 2.50 x 2.00 x 0.90 mm | CMOS | 1.600 to 2.200 V | -40 to 85 °C | +/-50 ppm |
X1G004611A02400 | SG-210SEBA | 14.745600 MHz | 2.50 x 2.00 x 0.90 mm | CMOS | 1.600 to 2.200 V | -40 to 85 °C | +/-50 ppm |
X1G004611A02500 | SG-210SEBA | 16.640000 MHz | 2.50 x 2.00 x 0.90 mm | CMOS | 1.600 to 2.200 V | -40 to 85 °C | +/-50 ppm |
X1G004611A02600 | SG-210SEBA | 24.576000 MHz | 2.50 x 2.00 x 0.90 mm | CMOS | 1.600 to 2.200 V | -40 to 85 °C | +/-100 ppm |
X1G004611A02700 | SG-210SEBA | 12.288000 MHz | 2.50 x 2.00 x 0.90 mm | CMOS | 1.600 to 2.200 V | -40 to 105 °C | +/-50 ppm |
X1G004611A02800 | SG-210SEBA | 25.000000 MHz | 2.50 x 2.00 x 0.90 mm | CMOS | 1.600 to 2.200 V | -40 to 105 °C | +/-50 ppm |
X1G004611A03000 | SG-210SEBA | 48.000000 MHz | 2.50 x 2.00 x 0.90 mm | CMOS | 1.600 to 2.200 V | -40 to 85 °C | +/-50 ppm |
X1G004611A03100 | SG-210SEBA | 25.000000 MHz | 2.50 x 2.00 x 0.90 mm | CMOS | 1.600 to 2.200 V | -40 to 125 °C | +/-100 ppm |
X1G004611A03300 | SG-210SEBA | 24.000000 MHz | 2.50 x 2.00 x 0.90 mm | CMOS | 1.600 to 2.200 V | -40 to 125 °C | +/-100 ppm |
X1G004611A03400 | SG-210SEBA | 20.000000 MHz | 2.50 x 2.00 x 0.90 mm | CMOS | 1.600 to 2.200 V | -40 to 105 °C | +/-50 ppm |
X1G004611A03500 | SG-210SEBA | 41.250000 MHz | 2.50 x 2.00 x 0.90 mm | CMOS | 1.600 to 2.200 V | -40 to 105 °C | +/-100 ppm |
X1G004611A03600 | SG-210SEBA | 16.640000 MHz | 2.50 x 2.00 x 0.90 mm | CMOS | 1.600 to 2.200 V | -40 to 105 °C | +/-50 ppm |
X1G004611A03700 | SG-210SEBA | 16.510000 MHz | 2.50 x 2.00 x 0.90 mm | CMOS | 1.600 to 2.200 V | -40 to 105 °C | +/-50 ppm |
X1G004611A03800 | SG-210SEBA | 9.600000 MHz | 2.50 x 2.00 x 0.90 mm | CMOS | 1.600 to 2.200 V | -40 to 105 °C | +/-50 ppm |
X1G004611A04100 | SG-210SEBA | 16.666600 MHz | 2.50 x 2.00 x 0.90 mm | CMOS | 1.600 to 2.200 V | -40 to 105 °C | +/-50 ppm |
X1G004611A04200 | SG-210SEBA | 33.300000 MHz | 2.50 x 2.00 x 0.90 mm | CMOS | 1.600 to 2.200 V | -40 to 105 °C | +/-100 ppm |
X1G004611A04300 | SG-210SEBA | 25.000000 MHz | 2.50 x 2.00 x 0.90 mm | CMOS | 1.600 to 2.200 V | -40 to 85 °C | +/-50 ppm |
X1G004611A04400 | SG-210SEBA | 33.000000 MHz | 2.50 x 2.00 x 0.90 mm | CMOS | 1.600 to 2.200 V | -40 to 105 °C | +/-50 ppm |
X1G004611A04500 | SG-210SEBA | 49.500000 MHz | 2.50 x 2.00 x 0.90 mm | CMOS | 1.600 to 2.200 V | -40 to 105 °C | +/-50 ppm |
X1G004591A00100 | SG-210SCBA | 27.000000 MHz | 2.50 x 2.00 x 0.90 mm | CMOS | 2.700 to 3.600 V | -40 to 105 °C | +/-50 ppm |
X1G004591A00200 | SG-210SCBA | 49.090000 MHz | 2.50 x 2.00 x 0.90 mm | CMOS | 2.700 to 3.600 V | -40 to 105 °C | +/-50 ppm |
X1G004591A00300 | SG-210SCBA | 40.000000 MHz | 2.50 x 2.00 x 0.90 mm | CMOS | 2.700 to 3.600 V | -40 to 125 °C | +/-100 ppm |
SG-210SDBA爱普生车规温度晶振编码X1G004601A00500,智能自动驾驶汽车晶振
“推荐阅读”
【责任编辑】:壹兆电子版权所有:http://www.oscillatorcrystal.com转载请注明出处
相关行业资讯
- MP11444 GTXO-163T 1612 26M TCXO削峰正弦波Golledge高利奇温补晶振
- 12.87163 KX-327RT 2012 32.768KHZ 7PF丹麦格耶GEYER汽车时钟晶振
- O 25,0-JO32-B-1V3-1-T1-LF 3225 25MHZ XO有源晶振Jauch德国法国
- FCO3C024567A3CCU00 3225 24.567MHz XO CMO富士Fuji晶振
- Q 0.032768-JTX310-12.5-20-T3-HMR-70K-LF 3215 -40+125℃耐高温晶振Jauch
- O 38,40-JT21G-E-K-1,8-LF削峰正弦波2016 TCXO 38.4M 1.8V 0.5PP -40+85℃ Jauch晶振
- 1XSF050000AR DSO221SXF 2520有源晶振 50MHz大真空KDS晶体振荡器
- FCX3M01300008I1L 3225 13MHZ 8PF 10PPM 富士晶振车规温度-40+125
- Wintron温特龙晶振WCO-302A30HL-EXT-013.000MHz产品系列介绍
- Wi2Wi适合多种系统的即插即用SN系列晶体陷波滤波器MCF-S#-25000X-A-A-B-X-X