苹果手机蓝牙专用晶振SG-8018CE爱普生有源晶振编码X1G005591001900
苹果手机蓝牙专用晶振SG-8018CE爱普生有源晶振编码X1G005591001900
手机蓝牙耳机博通集成BK3288恒玄科技BES2000山景集成电路BP1048B2博通集成BK3288是一款28nm工艺、高性能双核、低功耗的蓝牙5.0双模音频芯片,爱普生晶振其特性如下:1.-94dBm射频接收灵敏度,10dBm发射功率;2.专用音频DSP,支持浮点和每秒1G次数的16bit*16bit乘加运算能力;3.极低的待机和工作功耗,蓝牙耳机模式下A2DP功耗小于4mA;4.支持2.4GHz私有协议、2Mbps速率和长包模式,支持低延迟私有音频解决方案;5.96dB的音频ADC和102dB的音频DAC,采样率8kHz~384kHz;6.微秒级别的ADC和DAC延迟支持宽频带的主动降噪;7.单芯片同时支持主动降噪、阵列麦克风降噪、声学回声消除和人工智能语音助手CU控制接口.
SG-8018CE爱普生有源晶振编码X1G005591001900,苹果手机蓝牙专用晶振
爱普生有源晶振编码 | 型号 | 频率 | 长X宽X高 | 输出波 | 电源电压 | 工作温度 | 频差 |
X1G005591001100 | SG-8018CE | 25.000000 MHz | 3.20 x 2.50 x 1.20 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm |
X1G005591001200 | SG-8018CE | 25.000000 MHz | 3.20 x 2.50 x 1.20 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm |
X1G005591001300 | SG-8018CE | 20.000000 MHz | 3.20 x 2.50 x 1.20 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm |
X1G005591001400 | SG-8018CE | 20.000000 MHz | 3.20 x 2.50 x 1.20 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm |
X1G005591001500 | SG-8018CE | 50.000000 MHz | 3.20 x 2.50 x 1.20 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm |
X1G005591001600 | SG-8018CE | 50.000000 MHz | 3.20 x 2.50 x 1.20 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm |
X1G005591001700 | SG-8018CE | 48.000000 MHz | 3.20 x 2.50 x 1.20 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm |
X1G005591001800 | SG-8018CE | 48.000000 MHz | 3.20 x 2.50 x 1.20 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm |
X1G005591001900 | SG-8018CE | 24.000000 MHz | 3.20 x 2.50 x 1.20 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm |
X1G005591002000 | SG-8018CE | 24.000000 MHz | 3.20 x 2.50 x 1.20 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm |
X1G005591002100 | SG-8018CE | 40.000000 MHz | 3.20 x 2.50 x 1.20 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm |
X1G005591002200 | SG-8018CE | 40.000000 MHz | 3.20 x 2.50 x 1.20 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm |
X1G005591002300 | SG-8018CE | 16.000000 MHz | 3.20 x 2.50 x 1.20 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm |
X1G005591002400 | SG-8018CE | 16.000000 MHz | 3.20 x 2.50 x 1.20 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm |
X1G005591002500 | SG-8018CE | 12.000000 MHz | 3.20 x 2.50 x 1.20 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm |
X1G005591002600 | SG-8018CE | 12.000000 MHz | 3.20 x 2.50 x 1.20 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm |
X1G005591002700 | SG-8018CE | 10.000000 MHz | 3.20 x 2.50 x 1.20 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm |
X1G005591002800 | SG-8018CE | 10.000000 MHz | 3.20 x 2.50 x 1.20 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm |
X1G005591002900 | SG-8018CE | 27.000000 MHz | 3.20 x 2.50 x 1.20 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm |
X1G005591003000 | SG-8018CE | 27.000000 MHz | 3.20 x 2.50 x 1.20 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm |
X1G005591003100 | SG-8018CE | 32.000000 MHz | 3.20 x 2.50 x 1.20 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm |
X1G005591003200 | SG-8018CE | 32.000000 MHz | 3.20 x 2.50 x 1.20 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm |
X1G005591003300 | SG-8018CE | 8.000000 MHz | 3.20 x 2.50 x 1.20 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm |
X1G005591003400 | SG-8018CE | 8.000000 MHz | 3.20 x 2.50 x 1.20 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm |
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