爱普生SG-8018CB可编程晶振X1G005581011600具有极好的抗震性能
爱普生SG-8018CB可编程晶振X1G005581011600具有极好的抗震性能
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X1G005581001100 | 25.000000 MHz | SG-8018CB | 5.00x3.20x1.30mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C |
X1G005581001200 | 25.000000 MHz | SG-8018CB | 5.00x3.20x1.30mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C |
X1G005581001300 | 20.000000 MHz | SG-8018CB | 5.00x3.20x1.30mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C |
X1G005581001400 | 20.000000 MHz | SG-8018CB | 5.00x3.20x1.30mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C |
X1G005581001500 | 50.000000 MHz | SG-8018CB | 5.00x3.20x1.30mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C |
X1G005581001600 | 50.000000 MHz | SG-8018CB | 5.00x3.20x1.30mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C |
X1G005581001700 | 48.000000 MHz | SG-8018CB | 5.00x3.20x1.30mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C |
X1G005581001800 | 48.000000 MHz | SG-8018CB | 5.00x3.20x1.30mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C |
X1G005581001900 | 24.000000 MHz | SG-8018CB | 5.00x3.20x1.30mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C |
X1G005581002000 | 24.000000 MHz | SG-8018CB | 5.00x3.20x1.30mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C |
X1G005581002100 | 40.000000 MHz | SG-8018CB | 5.00x3.20x1.30mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C |
X1G005581002200 | 40.000000 MHz | SG-8018CB | 5.00x3.20x1.30mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C |
X1G005581002300 | 16.000000 MHz | SG-8018CB | 5.00x3.20x1.30mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C |
X1G005581002400 | 16.000000 MHz | SG-8018CB | 5.00x3.20x1.30mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C |
X1G005581002500 | 12.000000 MHz | SG-8018CB | 5.00x3.20x1.30mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C |
X1G005581002600 | 12.000000 MHz | SG-8018CB | 5.00x3.20x1.30mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C |
X1G005581002700 | 10.000000 MHz | SG-8018CB | 5.00x3.20x1.30mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C |
X1G005581002800 | 10.000000 MHz | SG-8018CB | 5.00x3.20x1.30mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C |
X1G005581011100 | 1.000000 MHz | SG-8018CB | 5.00x3.20x1.30mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C |
X1G005581011200 | 75.000000 MHz | SG-8018CB | 5.00x3.20x1.30mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C |
X1G005581011300 | 19.600000 MHz | SG-8018CB | 5.00x3.20x1.30mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C |
X1G005581011400 | 156.250000 MHz | SG-8018CB | 5.00x3.20x1.30mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C |
X1G005581011500 | 156.250000 MHz | SG-8018CB | 5.00x3.20x1.30mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C |
X1G005581011600 | 24.000000 MHz | SG-8018CB | 5.00x3.20x1.30mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C |
X1G005581011700 | 133.330000 MHz | SG-8018CB | 5.00x3.20x1.30mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C |
X1G005581011800 | 9.830400 MHz | SG-8018CB | 5.00x3.20x1.30mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C |
X1G005581011900 | 33.333300 MHz | SG-8018CB | 5.00x3.20x1.30mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C |
X1G005581012000 | 25.000000 MHz | SG-8018CB | 5.00x3.20x1.30mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C |
X1G005581012100 | 1.000000 MHz | SG-8018CB | 5.00x3.20x1.30mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C |
X1G005581012200 | 133.000000 MHz | SG-8018CB | 5.00x3.20x1.30mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C |
X1G005581012300 | 29.491200 MHz | SG-8018CB | 5.00x3.20x1.30mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C |
X1G005581012400 | 29.000000 MHz | SG-8018CB | 5.00x3.20x1.30mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C |
X1G005581012500 | 6.000000 MHz | SG-8018CB | 5.00x3.20x1.30mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C |
X1G005581012700 | 6.000000 MHz | SG-8018CB | 5.00x3.20x1.30mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C |
X1G005581012800 | 7.175000 MHz | SG-8018CB | 5.00x3.20x1.30mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C |
X1G005581012900 | 6.870000 MHz | SG-8018CB | 5.00x3.20x1.30mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C |
爱普生SG-8018CB可编程晶振X1G005581011600具有极好的抗震性能
可编程晶振的特点:
①全自动化半导体工艺(芯片级),无气密性问题,永不停振!
②集成了温度补偿电路,全温度范围无温漂,-40℃-85℃全温保证;
③平均无故障工作时间(MTBF)长达5亿小时!
④低抖动、低功耗、耐高温、高压、高湿、抗震性能好
⑤支持1-800MHZ任一频点,精确致小数点后5位输出。(如:65.53500MHz)。
⑥支持1.8V、2.5V、2.8V、3.3V多种工作电压匹配!
⑦支持±10PPM、±20PPM、±25PPM、±30PPM、±50PPM等各种精度匹配!
⑧国际标准QFN封装:7050、5032、3225、2520 可编程晶振应用于钟表、数码产品、车载数码、手机、对讲机、数码相机、MID平板电脑,光电技术等通讯设备及各种频率控制设备。
可编程晶振实为有源晶振,石英可编程(Q MEMS)具有高稳定、高精度等优越性能的石英材料[QUARTZ]和[MEMS]组合而成的造词,以石英为原料进行精微加工(光刻)并可以提供的小型化、高性能的晶体元器件被称为[Q MEMS]。应用于5G-WIFI6、物联网通讯、钟表、车载导航、智能手机、对讲机、数码产品,光电技术等通讯设备及各种频率控制设备。
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