X1G0041710197 SG-210STF 2520 24MHZ -40+105℃ EPSON 比亚迪和长城汽车车规温度晶振重要性
X1G0041710197 SG-210STF 2520 24MHZ -40+105℃ EPSON 比亚迪和长城汽车车规温度晶振重要性
关于插电混动车排放问题,比亚迪和长城汽车隔空开仗经济大环境不好的光景下,所有行业都那么卷.芯片行业、手机行业、汽车行业……根据平台的数据,在2016年环境保护部与国家质量监督检验检疫总局联合发布的《轻型汽车污染物排放限值及测量方法(中国第六阶段)》(GB18352.6—2016)标准于2020年7月1日生效后,中国电动汽车正在大幅增长——大约100个品牌提供了300多个车型,爱普生晶振因此中国国内电动汽车市场的竞争也很“卷”且微妙.最近两大国内汽车巨头,竟然在网上隔空打起了“嘴仗”.长城汽车开炮:比亚迪多款车型污染物排放不达标比亚迪还表示,比亚迪作为全球第一家提出插电式混合动力汽车产品的企业,在插混技术上有二十多年的积累和迭代,不像有的同行想得那么简单.
日本爱普生XO有源晶振,OSC晶体振荡器X1G0041710197 SG-210STF 2520 24MHZ -40+105℃车规宽温耐高温晶振
比亚迪呼吁希望大家多做有益于行业,有益于中国品牌的事情.比亚迪方面表示,“经了解,长城所说的情况,测试车辆由长城购买、车载级晶振保管并安排送检,中汽中心(天津)按长城的要求进行了相关项目的检测.测试车辆严格来说,不符合国标要求的送检状态,即应由第三方抽样、保管及送检,并要求完成3000公里磨合后测试,而长城送检的车辆在检测时,里程仅为450-670公里.鉴于以上,我们认为其检测报告无效,长城不能以此作为依据!我们的产品及相关检测符合国家标准,在国家权威机构通过认证.我们欢迎有关部门随时过来调查、取证和检测.”
比亚迪回应:多做实事,少搞不正当竞争5月25日中午12时许,比亚迪针对长城汽车的举报做出官方回应.“我们坚决反对任何形式的不正当竞争行为!并保留法务诉讼的权力!”长城汽车副总裁傅小康表示,本应该是报团取暖的阶段,却有人打着冠冕堂皇的旗号,侵蚀着来之不易的沃土.特别是在各类社交媒体平台上,长期存在着一些不良之风.因此,他呼吁,汽车行业经营主体、汽车行业从业者,深圳进口晶振代理商以及更多同行团结起来,抵御网络不正之风.目前长城汽车正在密切关注该案的立案及处理进展.5月25日,长城汽车发布公告称,2023年4月11日,长城汽车向生态环境部、国家市场监督管理总局、工业和信息化部递交举报材料,就比亚迪秦PLUSDM-i(产品型号:BYD7152WT6HEVC2)、宋PLUSDM-i(产品型号BYD6470ST6HEV2)采用常压油箱,涉嫌整车蒸发污染物排放不达标的问题进行举报.日本爱普生XO有源晶振,OSC晶体振荡器X1G0041710197 SG-210STF 2520 24MHZ -40+105℃车规宽温耐高温晶振
晶振型号
尺寸
输出
输出频率
电源电压
频率公差
[ 毫米 ]
波
范围[ MHz ]
[ V ] 典型值。
工作温度
[ x10^-6 / °C 至 °C ]
SG-210STF
2.5×2.0
CMOS
20个标准频率
1.8 至 3.3
+/-25 / -20 至 +70
+/-50 / -40 至 +85
+/-50 / -40 至 +105
SG2016CAA
2.0×1.6
CMOS
1.2 至 75
1.8 至 3.3
+/-50 / -40 至 +105
(AEC-Q200)
+/-100 / -40 至 +125
(+/-50 / -40 至 +85)
(+/-100 / -40 至 +105)
SG2016CAN
2.0×1.6
CMOS
20个标准频率
1.8 至 3.3
+/-25 / -20 至 +70
+/-50 / -40 至 +85
+/-50 / -40 至 +105
SG2016EGN
2.0×1.6
低压PECL
25 至 500
2.5
+/-25 / -40 至 +85
3.3
+/-50 / -40 至 +85
+/-25 / -40 至 +105
+/-50 / -40 至 +105
SG2016EHN
2.0×1.6
低压PECL
25 至 500
2.5
+/- 20 / -40 至 +85
3.3
+/- 20 / -40 至 +105
SG2016HGN
2.0×1.6
HCSL
25 至 500
2.5
+/-25 / -40 至 +85
3.3
+/-50 / -40 至 +85
+/-25 / -40 至 +105
+/-50 / -40 至 +105
SG2016HHN
2.0×1.6
HCSL
25 至 500
2.5
+/- 20 / -40 至 +85
3.3
+/- 20 / -40 至 +105
SG2016VGN
2.0×1.6
LVDS
25 至 500
1.8
+/-25 / -40 至 +85
2.5
+/-50 / -40 至 +85
3.3
+/-25 / -40 至 +105
+/-50 / -40 至 +105
SG2016VHN
2.0×1.6
LVDS
25 至 500
1.8
+/- 20 / -40 至 +85
2.5
+/- 20 / -40 至 +105
3.3
SG2520CAA
2.5×2.0
CMOS
1 至 75
1.8 至 3.3
+/-50 / -40 至 +105
(AEC-Q200)
+/-100 / -40 至 +125
(+/-50 / -40 至 +85)
(+/-100 / -40 至 +105)
SG2520EGN
2.5×2.0
低压PECL
25 至 500
2.5
+/-25 / -40 至 +85
3.3
+/-50 / -40 至 +85
+/-25 / -40 至 +105
+/-50 / -40 至 +105
SG2520EHN
2.5×2.0
低压PECL
25 至 500
2.5
+/- 20 / -40 至 +85
3.3
+/- 20 / -40 至 +105
SG2520HGN
2.5×2.0
HCSL
25 至 500
2.5
+/-25 / -40 至 +85
3.3
+/-50 / -40 至 +85
+/-25 / -40 至 +105
+/-50 / -40 至 +105
SG2520HHN
2.5×2.0
HCSL
25 至 500
2.5
+/- 20 / -40 至 +85
3.3
+/- 20 / -40 至 +105
SG2520VGN
2.5×2.0
LVDS
25 至 500
1.8
+/-25 / -40 至 +85
2.5
+/-50 / -40 至 +85
3.3
+/-25 / -40 至 +105
+/-50 / -40 至 +105
SG2520VHN
2.5×2.0
LVDS
25 至 500
1.8
+/- 20 / -40 至 +85
2.5
+/- 20 / -40 至 +105
3.3
SG3225CAN
3.2×2.5
CMOS
20个标准频率
1.8 至 3.3
+/-25 / -20 至 +70
+/-50 / -40 至 +85
+/-50 / -40 至 +105
SG3225EAN
3.2×2.5
低压PECL
73.5 至 700
2.5 至 3.3
+/-50 / -20 至 +70
+/-50 / -40 至 +85
+/-30 / -20 至 +70
+/-30 / -40 至 +85
+/-20 / -20 至 +70
SG3225ECN
3.2×2.5
低压PECL
25 至 500
2.5
+/-25 / -40 至 +85
3.3
+/-50 / -40 至 +85
+/-100 / -40 至 +85
+/-50 / -40 至 +105
+/-100 / -40 至 +105
SG3225HBN
3.2×2.5
HCSL
100 至 325
2.5
+/-50 / -40 至 +85
3.3
(包括 10 年老化)
+/-100 / -40 至 +85
(包括 10 年老化)
+/-100 / -40 至 +105
(包括 10 年老化)
SG3225VAN
3.2×2.5
LVDS(VAN)
73.5 至 700
2.5 至 3.3
+/-50 / -20 至 +70
+/-50 / -40 至 +85
+/-30 / -20 至 +70
+/-30 / -40 至 +85
+/-20 / -20 至 +70
SG3225VEN
3.2×2.5
LVDS
25 至 500
2.5
+/-25 / -40 至 +85
3.3
+/-50 / -40 至 +85
+/-100 / -40 至 +85
+/-50 / -40 至 +105
+/-100 / -40 至 +105
SG5032CAN
5.0 x 3.2
CMOS
20个标准频率
1.8 至 3.3
+/-25 / -20 至 +70
+/-50 / -40 至 +85
+/-50 / -40 至 +105
SG5032CCN
5.0 x 3.2
CMOS
2.5 至 50
5
+/-50 / -20 至 +70
+/-50 / -40 至 +85
SG5032EAN
5.0 x 3.2
低压PECL
73.5 至 700
2.5 至 3.3
+/-50 / -20 至 +70
+/-50 / -40 至 +85
+/-30 / -20 至 +70
+/-30 / -40 至 +85
+/-20 / -20 至 +70
SG5032ECN
5.0 x 3.2
低压PECL
200.1 至 500
2.5
+/-25 / -40 至 +85
3.3
+/-50 / -40 至 +85
+/-100 / -40 至 +85
+/-50 / -40 至 +105
+/-100 / -40 至 +105
SG5032
5.0 x 3.2
LVDS(VAN)
73.5 至 700
2.5 至 3.3
+/-50 / -20 至 +70
+/-50 / -40 至 +85
+/-30 / -20 至 +70
+/-30 / -40 至 +85
+/-20 / -20 至 +70
SG5032VEN
5.0 x 3.2
LVDS
200.1 至 500
2.5
+/-25 / -40 至 +85
3.3
+/-50 / -40 至 +85
+/-100 / -40 至 +85
+/-50 / -40 至 +105
+/-100 / -40 至 +105
SG7050CAN
7.0 x 5.0
CMOS
20个标准频率
1.8 至 3.3
+/-25 / -20 至 +70
+/-50 / -40 至 +85
+/-50 / -40 至 +105
SG7050CCN
7.0 x 5.0
CMOS
2.5 至 50
5
+/-50 / -20 至 +70
+/-50 / -40 至 +85
SG7050EAN
7.0 x 5.0
低压PECL
73.5 至 700
2.5 至 3.3
+/-50 / -20 至 +70
+/-50 / -40 至 +85
+/-30 / -20 至 +70
+/-30 / -40 至 +85
+/-20 / -20 至 +70
SG7050ECN
7.0 x 5.0
低压PECL
25 至 500
2.5
+/-25 / -40 至 +85
3.3
+/-50 / -40 至 +85
+/-100 / -40 至 +85
+/-50 / -40 至 +105
+/-100 / -40 至 +105
SG7050
7.0 x 5.0
低压差分 (VAN)
73.5 至 700
2.5 至 3.3
+/-50 / -20 至 +70
+/-50 / -40 至 +85
+/-30 / -20 至 +70
+/-30 / -40 至 +85
+/-20 / -20 至 +70
SG7050VEN
7.0 x 5.0
LVDS
25 至 500
2.5
+/-25 / -40 至 +85
3.3
+/-50 / -40 至 +85
+/-100 / -40 至 +85
+/-50 / -40 至 +105
+/-100 / -40 至 +105
随后比亚迪进行了回应今年3月11日,长城汽车在长达52分钟的“智能新能源干货大会”上,特别拿出10多分钟时间向行业发起倡议,呼吁携手净化网络传播环境,并开启“1000万悬赏计划”.5月25日10点40分,长城汽车发布公告称,2023年4月11日,长城汽车向生态环境部、国家市场监督管理总局、工业和信息化部递交举报材料,就比亚迪秦PLUSDM-i(产品型有源晶振XO振荡器OSCS石英晶振号:BYD7152WT6HEVC2)、宋PLUSDM-i(产品型号BYD6470ST6HEV2)采用常压油箱,涉嫌整车蒸发污染物排放不达标的问题进行举报.日本爱普生XO有源晶振,OSC晶体振荡器X1G0041710197 SG-210STF 2520 24MHZ -40+105℃车规宽温耐高温晶振
深圳市壹兆电子科技有限公司
编码
Model/型号
Frequency/频率
LxWxH/尺寸
Output Wave/输出方式
Supply Voltage/电源电压
Ope Temperature/工作温度
Freq. Tol./频率偏差
X1G0041710059
SG-210STF
25.000000 MHz
2.50 x 2.00 x 0.90 mm
CMOS
1.600 to 3.600 V
-40 to 105 °C
+/-50 ppm
X1G0041710069
SG-210STF
8.000000 MHz
2.50 x 2.00 x 0.90 mm
CMOS
1.600 to 3.600 V
-40 to 105 °C
+/-50 ppm
X1G0041710075
SG-210STF
33.333300 MHz
2.50 x 2.00 x 0.90 mm
CMOS
1.600 to 3.600 V
-40 to 105 °C
+/-50 ppm
X1G0041710126
SG-210STF
50.000000 MHz
2.50 x 2.00 x 0.90 mm
CMOS
1.600 to 3.600 V
-40 to 105 °C
+/-50 ppm
X1G0041710127
SG-210STF
32.000000 MHz
2.50 x 2.00 x 0.90 mm
CMOS
1.600 to 3.600 V
-40 to 105 °C
+/-50 ppm
X1G0041710128
SG-210STF
4.000000 MHz
2.50 x 2.00 x 0.90 mm
CMOS
1.600 to 3.600 V
-40 to 105 °C
+/-100 ppm
X1G0041710146
SG-210STF
6.780000 MHz
2.50 x 2.00 x 0.90 mm
CMOS
1.600 to 3.600 V
-40 to 105 °C
+/-50 ppm
X1G0041710147
SG-210STF
13.560000 MHz
2.50 x 2.00 x 0.90 mm
CMOS
1.600 to 3.600 V
-40 to 105 °C
+/-50 ppm
X1G0041710152
SG-210STF
27.120000 MHz
2.50 x 2.00 x 0.90 mm
CMOS
1.600 to 3.600 V
-40 to 105 °C
+/-50 ppm
X1G0041710153
SG-210STF
1.000000 MHz
2.50 x 2.00 x 0.90 mm
CMOS
1.600 to 3.600 V
-40 to 105 °C
+/-50 ppm
X1G0041710154
SG-210STF
16.000000 MHz
2.50 x 2.00 x 0.90 mm
CMOS
1.600 to 3.600 V
-40 to 105 °C
+/-50 ppm
X1G0041710155
SG-210STF
8.000000 MHz
2.50 x 2.00 x 0.90 mm
CMOS
1.600 to 3.600 V
-40 to 105 °C
+/-100 ppm
X1G0041710159
SG-210STF
9.000000 MHz
2.50 x 2.00 x 0.90 mm
CMOS
1.600 to 3.600 V
-40 to 105 °C
+/-50 ppm
X1G0041710192
SG-210STF
54.000000 MHz
2.50 x 2.00 x 0.90 mm
CMOS
1.600 to 3.600 V
-40 to 105 °C
+/-50 ppm
X1G0041710197
SG-210STF
24.000000 MHz
2.50 x 2.00 x 0.90 mm
CMOS
1.600 to 3.600 V
-40 to 105 °C
+/-50 ppm
X1G0041710198
SG-210STF
16.384000 MHz
2.50 x 2.00 x 0.90 mm
CMOS
1.600 to 3.600 V
-40 to 105 °C
+/-50 ppm
X1G0041710199
SG-210STF
66.666700 MHz
2.50 x 2.00 x 0.90 mm
CMOS
2.200 to 3.600 V
-40 to 105 °C
+/-50 ppm
X1G0041710201
SG-210STF
48.896000 MHz
2.50 x 2.00 x 0.90 mm
CMOS
1.600 to 3.600 V
-40 to 105 °C
+/-50 ppm
X1G0041710203
SG-210STF
48.000000 MHz
2.50 x 2.00 x 0.90 mm
CMOS
1.600 to 3.600 V
-40 to 105 °C
+/-50 ppm
X1G0041710204
SG-210STF
48.000000 MHz
2.50 x 2.00 x 0.90 mm
CMOS
1.600 to 3.600 V
-40 to 105 °C
+/-100 ppm
X1G0041710206
SG-210STF
40.000000 MHz
2.50 x 2.00 x 0.90 mm
CMOS
1.600 to 3.600 V
-40 to 105 °C
+/-50 ppm
X1G0041710232
SG-210STF
66.000000 MHz
2.50 x 2.00 x 0.90 mm
CMOS
2.200 to 3.600 V
-40 to 105 °C
+/-50 ppm
X1G0041710238
SG-210STF
20.000000 MHz
2.50 x 2.00 x 0.90 mm
CMOS
1.600 to 3.600 V
-40 to 105 °C
+/-50 ppm
X1G0041710239
SG-210STF
75.000000 MHz
2.50 x 2.00 x 0.90 mm
CMOS
2.200 to 3.600 V
-40 to 105 °C
+/-50 ppm
X1G0041710242
SG-210STF
32.768000 MHz
2.50 x 2.00 x 0.90 mm
CMOS
1.600 to 3.600 V
-40 to 105 °C
+/-50 ppm
X1G0041710244
SG-210STF
26.000000 MHz
2.50 x 2.00 x 0.90 mm
CMOS
1.600 to 3.600 V
-40 to 105 °C
+/-50 ppm
X1G0041710250
SG-210STF
27.000000 MHz
2.50 x 2.00 x 0.90 mm
CMOS
1.600 to 3.600 V
-40 to 105 °C
+/-50 ppm
X1G0041710251
SG-210STF
66.666600 MHz
2.50 x 2.00 x 0.90 mm
CMOS
2.200 to 3.600 V
-40 to 105 °C
+/-50 ppm
X1G0041710257
SG-210STF
30.000000 MHz
2.50 x 2.00 x 0.90 mm
CMOS
1.600 to 3.600 V
-40 to 105 °C
+/-50 ppm
X1G0041710263
SG-210STF
18.000000 MHz
2.50 x 2.00 x 0.90 mm
CMOS
1.600 to 3.600 V
-40 to 105 °C
+/-50 ppm
X1G0041710266
SG-210STF
1.000000 MHz
2.50 x 2.00 x 0.90 mm
CMOS
1.600 to 3.600 V
-40 to 105 °C
+/-100 ppm
X1G0041710268
SG-210STF
2.048000 MHz
2.50 x 2.00 x 0.90 mm
CMOS
1.600 to 3.600 V
-40 to 105 °C
+/-100 ppm
X1G0041710269
SG-210STF
4.096000 MHz
2.50 x 2.00 x 0.90 mm
CMOS
1.600 to 3.600 V
-40 to 105 °C
+/-50 ppm
X1G0041710280
SG-210STF
12.000000 MHz
2.50 x 2.00 x 0.90 mm
CMOS
1.600 to 3.600 V
-40 to 105 °C
+/-50 ppm
X1G0041710281
SG-210STF
33.333000 MHz
2.50 x 2.00 x 0.90 mm
CMOS
1.600 to 3.600 V
-40 to 105 °C
+/-50 ppm
X1G0041710282
SG-210STF
36.000000 MHz
2.50 x 2.00 x 0.90 mm
CMOS
1.600 to 3.600 V
-40 to 105 °C
+/-50 ppm
X1G0041710288
SG-210STF
16.000000 MHz
2.50 x 2.00 x 0.90 mm
CMOS
1.600 to 3.600 V
-40 to 105 °C
+/-100 ppm
X1G0041710294
SG-210STF
2.457600 MHz
2.50 x 2.00 x 0.90 mm
CMOS
1.600 to 3.600 V
-40 to 105 °C
+/-50 ppm
X1G0041710298
SG-210STF
33.333333 MHz
2.50 x 2.00 x 0.90 mm
CMOS
1.600 to 3.600 V
-40 to 105 °C
+/-50 ppm
X1G0041710299
SG-210STF
4.000000 MHz
2.50 x 2.00 x 0.90 mm
CMOS
1.600 to 3.600 V
-40 to 105 °C
+/-50 ppm
X1G0041710300
SG-210STF
33.330000 MHz
2.50 x 2.00 x 0.90 mm
CMOS
1.600 to 3.600 V
-40 to 105 °C
+/-50 ppm
X1G0041710304
SG-210STF
10.000000 MHz
2.50 x 2.00 x 0.90 mm
CMOS
1.600 to 3.600 V
-40 to 105 °C
+/-50 ppm
X1G0044510026
SG5032CAN
25.000000 MHz
5.00 x 3.20 x 1.30 mm
CMOS
1.600 to 3.630 V
-40 to 105 °C
+/-100 ppm
X1G0044510036
SG5032CAN
50.000000 MHz
5.00 x 3.20 x 1.30 mm
CMOS
1.600 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0044510109
SG5032CAN
33.333300 MHz
5.00 x 3.20 x 1.30 mm
CMOS
1.600 to 3.630 V
-40 to 105 °C
+/-100 ppm
X1G0044510110
SG5032CAN
66.666600 MHz
5.00 x 3.20 x 1.30 mm
CMOS
2.250 to 3.630 V
-40 to 105 °C
+/-100 ppm
X1G0044510111
SG5032CAN
48.000000 MHz
5.00 x 3.20 x 1.30 mm
CMOS
1.600 to 3.630 V
-40 to 105 °C
+/-100 ppm
X1G0044510118
SG5032CAN
5.000000 MHz
5.00 x 3.20 x 1.30 mm
CMOS
1.600 to 3.630 V
-40 to 105 °C
+/-100 ppm
X1G0044510129
SG5032CAN
8.000000 MHz
5.00 x 3.20 x 1.30 mm
CMOS
1.600 to 3.630 V
-40 to 105 °C
+/-100 ppm
X1G0044510136
SG5032CAN
6.500000 MHz
5.00 x 3.20 x 1.30 mm
CMOS
1.600 to 3.630 V
-40 to 105 °C
+/-100 ppm
X1G0044510160
SG5032CAN
40.000000 MHz
5.00 x 3.20 x 1.30 mm
CMOS
1.600 to 3.630 V
-40 to 105 °C
+/-100 ppm
X1G0044510161
SG5032CAN
20.000000 MHz
5.00 x 3.20 x 1.30 mm
CMOS
1.600 to 3.630 V
-40 to 105 °C
+/-100 ppm
X1G0044510162
SG5032CAN
30.000000 MHz
5.00 x 3.20 x 1.30 mm
CMOS
1.600 to 3.630 V
-40 to 105 °C
+/-100 ppm
X1G0044510163
SG5032CAN
14.745600 MHz
5.00 x 3.20 x 1.30 mm
CMOS
1.600 to 3.630 V
-40 to 105 °C
+/-100 ppm
X1G0044510164
SG5032CAN
33.000000 MHz
5.00 x 3.20 x 1.30 mm
CMOS
1.600 to 3.630 V
-40 to 105 °C
+/-100 ppm
X1G0044510165
SG5032CAN
19.660800 MHz
5.00 x 3.20 x 1.30 mm
CMOS
1.600 to 3.630 V
-40 to 105 °C
+/-100 ppm
X1G0044510178
SG5032CAN
10.000000 MHz
5.00 x 3.20 x 1.30 mm
CMOS
1.600 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0044510180
SG5032CAN
75.000000 MHz
5.00 x 3.20 x 1.30 mm
CMOS
2.250 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0044510181
SG5032CAN
74.250000 MHz
5.00 x 3.20 x 1.30 mm
CMOS
2.250 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0044510182
SG5032CAN
7.372800 MHz
5.00 x 3.20 x 1.30 mm
CMOS
1.600 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0044510184
SG5032CAN
24.000000 MHz
5.00 x 3.20 x 1.30 mm
CMOS
1.600 to 3.630 V
-40 to 105 °C
+/-100 ppm
X1G0044810139
SG7050CAN
10.000000 MHz
7.00 x 5.00 x 1.50 mm
CMOS
1.600 to 3.630 V
-40 to 105 °C
+/-100 ppm
X1G0044810209
SG7050CAN
48.000000 MHz
7.00 x 5.00 x 1.50 mm
CMOS
1.600 to 3.630 V
-40 to 105 °C
+/-100 ppm
X1G0044810214
SG7050CAN
2.457600 MHz
7.00 x 5.00 x 1.50 mm
CMOS
1.600 to 3.630 V
-40 to 105 °C
+/-100 ppm
X1G0044810229
SG7050CAN
3.686400 MHz
7.00 x 5.00 x 1.50 mm
CMOS
1.600 to 3.630 V
-40 to 105 °C
+/-100 ppm
X1G0044810237
SG7050CAN
14.745600 MHz
7.00 x 5.00 x 1.50 mm
CMOS
1.600 to 3.630 V
-40 to 105 °C
+/-100 ppm
X1G0044810238
SG7050CAN
16.000000 MHz
7.00 x 5.00 x 1.50 mm
CMOS
1.600 to 3.630 V
-40 to 105 °C
+/-100 ppm
X1G0044810240
SG7050CAN
7.372800 MHz
7.00 x 5.00 x 1.50 mm
CMOS
1.600 to 3.630 V
-40 to 105 °C
+/-100 ppm
X1G004591A001
SG-210SCBA
27.000000 MHz
2.50 x 2.00 x 0.90 mm
CMOS
2.700 to 3.600 V
-40 to 105 °C
+/-50 ppm
X1G004591A002
SG-210SCBA
49.090000 MHz
2.50 x 2.00 x 0.90 mm
CMOS
2.700 to 3.600 V
-40 to 105 °C
+/-50 ppm
X1G004591A004
SG-210SCBA
8.000000 MHz
2.50 x 2.00 x 0.90 mm
CMOS
2.700 to 3.600 V
-40 to 105 °C
+/-50 ppm
X1G004591A009
SG-210SCBA
20.000000 MHz
2.50 x 2.00 x 0.90 mm
CMOS
2.700 to 3.600 V
-40 to 105 °C
+/-50 ppm
X1G004591A024
SG-210SCBA
25.000000 MHz
2.50 x 2.00 x 0.90 mm
CMOS
2.700 to 3.600 V
-40 to 105 °C
+/-50 ppm
X1G004591A031
SG-210SCBA
25.000000 MHz
2.50 x 2.00 x 0.90 mm
CMOS
2.700 to 3.600 V
-40 to 105 °C
+/-100 ppm
X1G004591A036
SG-210SCBA
33.333300 MHz
2.50 x 2.00 x 0.90 mm
CMOS
2.700 to 3.600 V
-40 to 105 °C
+/-50 ppm
X1G004591A037
SG-210SCBA
14.745600 MHz
2.50 x 2.00 x 0.90 mm
CMOS
2.700 to 3.600 V
-40 to 105 °C
+/-50 ppm
X1G004591A040
SG-210SCBA
24.000000 MHz
2.50 x 2.00 x 0.90 mm
CMOS
2.700 to 3.600 V
-40 to 105 °C
+/-50 ppm
X1G004591A041
SG-210SCBA
16.000000 MHz
2.50 x 2.00 x 0.90 mm
CMOS
2.700 to 3.600 V
-40 to 105 °C
+/-50 ppm
X1G004591A042
SG-210SCBA
26.973027 MHz
2.50 x 2.00 x 0.90 mm
CMOS
2.700 to 3.600 V
-40 to 105 °C
+/-50 ppm
X1G004591A044
SG-210SCBA
54.000000 MHz
2.50 x 2.00 x 0.90 mm
CMOS
2.700 to 3.600 V
-40 to 105 °C
+/-50 ppm
X1G004591A049
SG-210SCBA
24.576000 MHz
2.50 x 2.00 x 0.90 mm
CMOS
2.700 to 3.600 V
-40 to 105 °C
+/-100 ppm
X1G004591A050
SG-210SCBA
22.579200 MHz
2.50 x 2.00 x 0.90 mm
CMOS
2.700 to 3.600 V
-40 to 105 °C
+/-50 ppm
X1G004591A060
SG-210SCBA
10.000000 MHz
2.50 x 2.00 x 0.90 mm
CMOS
2.700 to 3.600 V
-40 to 105 °C
+/-50 ppm
X1G004591A061
SG-210SCBA
11.059200 MHz
2.50 x 2.00 x 0.90 mm
CMOS
2.700 to 3.600 V
-40 to 105 °C
+/-50 ppm
X1G004591A065
SG-210SCBA
33.300000 MHz
2.50 x 2.00 x 0.90 mm
CMOS
2.700 to 3.600 V
-40 to 105 °C
+/-50 ppm
X1G004591A066
SG-210SCBA
5.000000 MHz
2.50 x 2.00 x 0.90 mm
CMOS
2.700 to 3.600 V
-40 to 105 °C
+/-50 ppm
X1G004591A068
SG-210SCBA
12.288000 MHz
2.50 x 2.00 x 0.90 mm
CMOS
2.700 to 3.600 V
-40 to 105 °C
+/-50 ppm
X1G004591A071
SG-210SCBA
6.790000 MHz
2.50 x 2.00 x 0.90 mm
CMOS
2.700 to 3.600 V
-40 to 105 °C
+/-100 ppm
X1G004591A073
SG-210SCBA
30.000000 MHz
2.50 x 2.00 x 0.90 mm
CMOS
2.700 to 3.600 V
-40 to 105 °C
+/-50 ppm
X1G004591A074
SG-210SCBA
26.000000 MHz
2.50 x 2.00 x 0.90 mm
CMOS
2.700 to 3.600 V
-40 to 105 °C
+/-50 ppm
X1G004591A075
SG-210SCBA
38.400000 MHz
2.50 x 2.00 x 0.90 mm
CMOS
2.700 to 3.600 V
-40 to 105 °C
+/-50 ppm
X1G004591A076
SG-210SCBA
50.000000 MHz
2.50 x 2.00 x 0.90 mm
CMOS
2.700 to 3.600 V
-40 to 105 °C
+/-50 ppm
X1G004591A077
SG-210SCBA
7.904000 MHz
2.50 x 2.00 x 0.90 mm
CMOS
2.700 to 3.600 V
-40 to 105 °C
+/-50 ppm
X1G004601A004
SG-210SDBA
16.000000 MHz
2.50 x 2.00 x 0.90 mm
CMOS
2.200 to 3.000 V
-40 to 105 °C
+/-100 ppm
X1G004601A008
SG-210SDBA
12.000000 MHz
2.50 x 2.00 x 0.90 mm
CMOS
2.200 to 3.000 V
-40 to 105 °C
+/-50 ppm
X1G004601A010
SG-210SDBA
24.600000 MHz
2.50 x 2.00 x 0.90 mm
CMOS
2.200 to 3.000 V
-40 to 105 °C
+/-50 ppm
X1G004611A002
SG-210SEBA
19.200000 MHz
2.50 x 2.00 x 0.90 mm
CMOS
1.600 to 2.200 V
-40 to 105 °C
+/-100 ppm
X1G004611A005
SG-210SEBA
27.000000 MHz
2.50 x 2.00 x 0.90 mm
CMOS
1.600 to 2.200 V
-40 to 105 °C
+/-50 ppm
X1G004611A006
SG-210SEBA
26.973027 MHz
2.50 x 2.00 x 0.90 mm
CMOS
1.600 to 2.200 V
-40 to 105 °C
+/-50 ppm
X1G004611A007
SG-210SEBA
37.500000 MHz
2.50 x 2.00 x 0.90 mm
CMOS
1.600 to 2.200 V
-40 to 105 °C
+/-50 ppm
X1G004611A011
SG-210SEBA
40.000000 MHz
2.50 x 2.00 x 0.90 mm
CMOS
1.600 to 2.200 V
-40 to 105 °C
+/-100 ppm
X1G004611A012
SG-210SEBA
24.000000 MHz
2.50 x 2.00 x 0.90 mm
CMOS
1.600 to 2.200 V
-40 to 105 °C
+/-100 ppm
X1G004611A016
SG-210SEBA
14.000000 MHz
2.50 x 2.00 x 0.90 mm
CMOS
1.600 to 2.200 V
-40 to 105 °C
+/-50 ppm
X1G004611A017
SG-210SEBA
37.125000 MHz
2.50 x 2.00 x 0.90 mm
CMOS
1.600 to 2.200 V
-40 to 105 °C
+/-50 ppm
X1G0048010018
SG2016CAN
20.000000 MHz
2.00 x 1.60 x 0.70 mm
CMOS
1.600 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0048010021
SG2016CAN
27.000000 MHz
2.00 x 1.60 x 0.70 mm
CMOS
1.600 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0048010022
SG2016CAN
40.000000 MHz
2.00 x 1.60 x 0.70 mm
CMOS
1.600 to 3.630 V
-40 to 105 °C
+/-100 ppm
X1G0051810011
SG-8101CG
48.000000 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-20 ppm
X1G0051810013
SG-8101CG
66.666660 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-20 ppm
X1G0051810014
SG-8101CG
24.000000 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-20 ppm
X1G0051810015
SG-8101CG
100.000000 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-20 ppm
X1G0051810016
SG-8101CG
16.000000 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-20 ppm
X1G0051810017
SG-8101CG
25.000000 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-20 ppm
X1G0051810018
SG-8101CG
25.000000 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-20 ppm
X1G0051810019
SG-8101CG
1.000000 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-20 ppm
X1G0051810020
SG-8101CG
80.000000 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-20 ppm
X1G0051810021
SG-8101CG
58.982400 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0051810022
SG-8101CG
25.000000 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-20 ppm
X1G0051810023
SG-8101CG
40.000000 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-20 ppm
X1G0051810024
SG-8101CG
50.000000 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-20 ppm
X1G0051810025
SG-8101CG
16.000000 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-20 ppm
X1G0051810030
SG-8101CG
39.321600 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0051810031
SG-8101CG
31.250000 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-20 ppm
X1G0051810033
SG-8101CG
12.000000 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-20 ppm
X1G0051810034
SG-8101CG
8.192000 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-20 ppm
X1G0051810035
SG-8101CG
5.000000 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-20 ppm
X1G0051810036
SG-8101CG
96.000000 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-20 ppm
X1G0051810037
SG-8101CG
49.152000 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-20 ppm
X1G0051810043
SG-8101CG
1.544000 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-20 ppm
X1G0051810047
SG-8101CG
2.048000 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-20 ppm
X1G0051810048
SG-8101CG
35.000000 MHz
2.50 x 2.00 x 0.80 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0051910012
SG-8101CA
60.000000 MHz
7.00 x 5.00 x 1.40 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0051910024
SG-8101CA
5.560000 MHz
7.00 x 5.00 x 1.40 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0051910026
SG-8101CA
13.516800 MHz
7.00 x 5.00 x 1.40 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0051910027
SG-8101CA
25.000000 MHz
7.00 x 5.00 x 1.40 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-20 ppm
X1G0051910030
SG-8101CA
98.304000 MHz
7.00 x 5.00 x 1.40 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-20 ppm
X1G0051910031
SG-8101CA
10.000000 MHz
7.00 x 5.00 x 1.40 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0051910033
SG-8101CA
40.000000 MHz
7.00 x 5.00 x 1.40 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-20 ppm
X1G0052010011
SG-8101CB
133.000000 MHz
5.00 x 3.20 x 1.20 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-50 ppm
X1G0052010017
SG-8101CB
24.545400 MHz
5.00 x 3.20 x 1.20 mm
CMOS
1.620 to 3.630 V
-40 to 105 °C
+/-20 ppm
晶振联系人:龚成
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